Electric and dielectric properties of glasses of Cu-Sb-S-I system
D.c. and a.c. conductivity (d(0) and d(w )) and dielectric parameters (d and tgd ) of Cu-Sb-S-I system glasses are investigated in 1.0*10⁴ - 6.0*10⁷ Hz frequency range and 170-400 K temperature interval. In the glasses of SbSI-CuSbS₂ system the d.c. conductivity along delocalized states prevails. A....
Збережено в:
| Дата: | 2003 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117961 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electric and dielectric properties of glasses of Cu-Sb-S-I system / V.M. Rubish // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 76-80. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | D.c. and a.c. conductivity (d(0) and d(w )) and dielectric parameters (d and tgd ) of Cu-Sb-S-I system glasses are investigated in 1.0*10⁴ - 6.0*10⁷ Hz frequency range and 170-400 K temperature interval. In the glasses of SbSI-CuSbS₂ system the d.c. conductivity along delocalized states prevails. A.c. conductivity is explained by a combinated hopping mechanism of charge transfer by bipolarons and "simple" polarons. A high concentration of charge carriers and availability of dipole structural units Cu⁺S⁻SbS₂/₂ in the glass matrix define dielectric proporties of glasses. |
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