Electric and dielectric properties of glasses of Cu-Sb-S-I system
D.c. and a.c. conductivity (d(0) and d(w )) and dielectric parameters (d and tgd ) of Cu-Sb-S-I system glasses are investigated in 1.0*10⁴ - 6.0*10⁷ Hz frequency range and 170-400 K temperature interval. In the glasses of SbSI-CuSbS₂ system the d.c. conductivity along delocalized states prevails. A....
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| Дата: | 2003 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117961 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electric and dielectric properties of glasses of Cu-Sb-S-I system / V.M. Rubish // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 76-80. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117961 |
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irk-123456789-1179612017-05-28T03:05:11Z Electric and dielectric properties of glasses of Cu-Sb-S-I system Rubish, V.M. D.c. and a.c. conductivity (d(0) and d(w )) and dielectric parameters (d and tgd ) of Cu-Sb-S-I system glasses are investigated in 1.0*10⁴ - 6.0*10⁷ Hz frequency range and 170-400 K temperature interval. In the glasses of SbSI-CuSbS₂ system the d.c. conductivity along delocalized states prevails. A.c. conductivity is explained by a combinated hopping mechanism of charge transfer by bipolarons and "simple" polarons. A high concentration of charge carriers and availability of dipole structural units Cu⁺S⁻SbS₂/₂ in the glass matrix define dielectric proporties of glasses. 2003 Article Electric and dielectric properties of glasses of Cu-Sb-S-I system / V.M. Rubish // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 76-80. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 72.15.Cz, 73.61.Jc, 77.22.-d http://dspace.nbuv.gov.ua/handle/123456789/117961 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
D.c. and a.c. conductivity (d(0) and d(w )) and dielectric parameters (d and tgd ) of Cu-Sb-S-I system glasses are investigated in 1.0*10⁴ - 6.0*10⁷ Hz frequency range and 170-400 K temperature interval. In the glasses of SbSI-CuSbS₂ system the d.c. conductivity along delocalized states prevails. A.c. conductivity is explained by a combinated hopping mechanism of charge transfer by bipolarons and "simple" polarons. A high concentration of charge carriers and availability of dipole structural units Cu⁺S⁻SbS₂/₂ in the glass matrix define dielectric proporties of glasses. |
| format |
Article |
| author |
Rubish, V.M. |
| spellingShingle |
Rubish, V.M. Electric and dielectric properties of glasses of Cu-Sb-S-I system Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Rubish, V.M. |
| author_sort |
Rubish, V.M. |
| title |
Electric and dielectric properties of glasses of Cu-Sb-S-I system |
| title_short |
Electric and dielectric properties of glasses of Cu-Sb-S-I system |
| title_full |
Electric and dielectric properties of glasses of Cu-Sb-S-I system |
| title_fullStr |
Electric and dielectric properties of glasses of Cu-Sb-S-I system |
| title_full_unstemmed |
Electric and dielectric properties of glasses of Cu-Sb-S-I system |
| title_sort |
electric and dielectric properties of glasses of cu-sb-s-i system |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117961 |
| citation_txt |
Electric and dielectric properties of glasses of Cu-Sb-S-I system / V.M. Rubish // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 76-80. — Бібліогр.: 16 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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