Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals

Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals

We show that processes of creation, radiation and decay of the ground (n = 1) and excited exciton states in layered n-InSe and p-GaSe crystals involve direct (photon -> exciton -> photon, at k = 0), as well as indirect vertical (photon ± phonon -> exciton -> photon ± phonon, at k ~0), op...

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Бібліографічні деталі
Дата:2003
Автори: Zhirko, Yu.I., Zharkov, I.P.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117990
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals / I.P. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 134-140. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117990
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spelling irk-123456789-1179902017-05-28T03:05:15Z Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals Zhirko, Yu.I. Zharkov, I.P. We show that processes of creation, radiation and decay of the ground (n = 1) and excited exciton states in layered n-InSe and p-GaSe crystals involve direct (photon -> exciton -> photon, at k = 0), as well as indirect vertical (photon ± phonon -> exciton -> photon ± phonon, at k ~0), optical transitions. For the n = 1 exciton state both transitions are compatible. For the excited exciton states the above transitions are not compatible; as a result, the integral intensity of absorption bands for excited exciton states, Kn, exceeds K⁰/n³ (where K⁰ is the classic value for the n = 1 exciton absorption band) and grows with temperature. It is shown that presence of two-dimensional gas of charge carriers (electrons/holes localized in quantum wells) that are degenerate with excitons in the momentum space leads to suppression of the oscillator strength of exciton transition for ground, as well as excited, states. It was found experimentally that growth of temperature in p-GaSe crystals results in holes redistribution to the higher-energy states. This appears as consecutive (from the ground to excited states) suppression and re-establishment of the integral characteristics of exciton absorption bands. 2003 Article Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals / I.P. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 134-140. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 71.35.Cc, 78.40.Fy http://dspace.nbuv.gov.ua/handle/123456789/117990 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We show that processes of creation, radiation and decay of the ground (n = 1) and excited exciton states in layered n-InSe and p-GaSe crystals involve direct (photon -> exciton -> photon, at k = 0), as well as indirect vertical (photon ± phonon -> exciton -> photon ± phonon, at k ~0), optical transitions. For the n = 1 exciton state both transitions are compatible. For the excited exciton states the above transitions are not compatible; as a result, the integral intensity of absorption bands for excited exciton states, Kn, exceeds K⁰/n³ (where K⁰ is the classic value for the n = 1 exciton absorption band) and grows with temperature. It is shown that presence of two-dimensional gas of charge carriers (electrons/holes localized in quantum wells) that are degenerate with excitons in the momentum space leads to suppression of the oscillator strength of exciton transition for ground, as well as excited, states. It was found experimentally that growth of temperature in p-GaSe crystals results in holes redistribution to the higher-energy states. This appears as consecutive (from the ground to excited states) suppression and re-establishment of the integral characteristics of exciton absorption bands.
format Article
author Zhirko, Yu.I.
Zharkov, I.P.
spellingShingle Zhirko, Yu.I.
Zharkov, I.P.
Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Zhirko, Yu.I.
Zharkov, I.P.
author_sort Zhirko, Yu.I.
title Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals
title_short Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals
title_full Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals
title_fullStr Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals
title_full_unstemmed Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals
title_sort investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-inse and p-gase crystals
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/117990
citation_txt Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals / I.P. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 134-140. — Бібліогр.: 17 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT zhirkoyui investigationofsomemechanismsforformationofexcitonabsorptionbandsinlayeredsemiconductorninseandpgasecrystals
AT zharkovip investigationofsomemechanismsforformationofexcitonabsorptionbandsinlayeredsemiconductorninseandpgasecrystals
first_indexed 2023-10-18T20:31:04Z
last_indexed 2023-10-18T20:31:04Z
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