Electron energy spectrum in a spherical quantum dot with smooth confinement
The electron energy spectrum in a quantum dot (QD) with smooth dependences of the quasiparticle potential energy and the effective mass at the interface between semiconductor media is calculated in the effective mass approximation. It is shown that the electron energy corrections due to the taili...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2007 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117995 |
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| Цитувати: | Electron energy spectrum in a spherical quantum dot with smooth confinement / V. Holovatsky, O. Voitsekhivska, V. Gutsul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 10-16. — Бібліогр.: 9 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117995 |
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dspace |
| spelling |
irk-123456789-1179952017-05-28T03:05:33Z Electron energy spectrum in a spherical quantum dot with smooth confinement Holovatsky, V. Voitsekhivska, O. Gutsul, V. The electron energy spectrum in a quantum dot (QD) with smooth dependences of the quasiparticle potential energy and the effective mass at the interface between semiconductor media is calculated in the effective mass approximation. It is shown that the electron energy corrections due to the tailing of the interface are nonmonotonous functions of the QD radius, the increasing of which brings to the rapid increasing of shifts, reaching their maxima, and slowly decreasing for the QDs of big sizes. The calculations prove that the relative corrections for the different electron energy levels in a spherical QD are placed closer to each other with increase in the radius. The growth of the parameter of interface tailing leads to the proportional increase in the corrections to electron energy spectra. Numerical calculations are performed for HgS/CdS and GaAs/AlxGa₁₋xAs QDs, all dependences being qualitatively similar. 2007 Article Electron energy spectrum in a spherical quantum dot with smooth confinement / V. Holovatsky, O. Voitsekhivska, V. Gutsul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 10-16. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 68.35.-p, 71.18.+y, 73.21.La http://dspace.nbuv.gov.ua/handle/123456789/117995 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The electron energy spectrum in a quantum dot (QD) with smooth
dependences of the quasiparticle potential energy and the effective mass at the interface
between semiconductor media is calculated in the effective mass approximation. It is
shown that the electron energy corrections due to the tailing of the interface are
nonmonotonous functions of the QD radius, the increasing of which brings to the rapid
increasing of shifts, reaching their maxima, and slowly decreasing for the QDs of big
sizes. The calculations prove that the relative corrections for the different electron energy
levels in a spherical QD are placed closer to each other with increase in the radius. The
growth of the parameter of interface tailing leads to the proportional increase in the
corrections to electron energy spectra. Numerical calculations are performed for
HgS/CdS and GaAs/AlxGa₁₋xAs QDs, all dependences being qualitatively similar. |
| format |
Article |
| author |
Holovatsky, V. Voitsekhivska, O. Gutsul, V. |
| spellingShingle |
Holovatsky, V. Voitsekhivska, O. Gutsul, V. Electron energy spectrum in a spherical quantum dot with smooth confinement Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Holovatsky, V. Voitsekhivska, O. Gutsul, V. |
| author_sort |
Holovatsky, V. |
| title |
Electron energy spectrum in a spherical quantum dot with smooth confinement |
| title_short |
Electron energy spectrum in a spherical quantum dot with smooth confinement |
| title_full |
Electron energy spectrum in a spherical quantum dot with smooth confinement |
| title_fullStr |
Electron energy spectrum in a spherical quantum dot with smooth confinement |
| title_full_unstemmed |
Electron energy spectrum in a spherical quantum dot with smooth confinement |
| title_sort |
electron energy spectrum in a spherical quantum dot with smooth confinement |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117995 |
| citation_txt |
Electron energy spectrum in a spherical quantum dot with smooth confinement / V. Holovatsky, O. Voitsekhivska, V. Gutsul // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 10-16. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT holovatskyv electronenergyspectruminasphericalquantumdotwithsmoothconfinement AT voitsekhivskao electronenergyspectruminasphericalquantumdotwithsmoothconfinement AT gutsulv electronenergyspectruminasphericalquantumdotwithsmoothconfinement |
| first_indexed |
2023-10-18T20:31:05Z |
| last_indexed |
2023-10-18T20:31:05Z |
| _version_ |
1796150408829206528 |