Studies of CdHgTe as a material for x- and γ-ray detectors

Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and compensation degree, as well as the carrier lifetime and surface-recombination vel...

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Дата:2003
Автори: Kosyachenko, L.A., Kulchynsky, V.V., Maslyanchuk, O.L., Paranchych, S.Yu., Sklyarchuk, V.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118001
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Studies of CdHgTe as a material for x- and γ-ray detectors / L.A. Kosyachenko, V.V. Kulchynsky, O.L. Maslyanchuk, S.Yu. Paranchych, V.M. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 227-232. — Бібліогр.: 19 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1180012017-05-29T03:05:55Z Studies of CdHgTe as a material for x- and γ-ray detectors Kosyachenko, L.A. Kulchynsky, V.V. Maslyanchuk, O.L. Paranchych, S.Yu. Sklyarchuk, V.M. Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and compensation degree, as well as the carrier lifetime and surface-recombination velocity have been found. 2003 Article Studies of CdHgTe as a material for x- and γ-ray detectors / L.A. Kosyachenko, V.V. Kulchynsky, O.L. Maslyanchuk, S.Yu. Paranchych, V.M. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 227-232. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 72.80.Ey http://dspace.nbuv.gov.ua/handle/123456789/118001 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and compensation degree, as well as the carrier lifetime and surface-recombination velocity have been found.
format Article
author Kosyachenko, L.A.
Kulchynsky, V.V.
Maslyanchuk, O.L.
Paranchych, S.Yu.
Sklyarchuk, V.M.
spellingShingle Kosyachenko, L.A.
Kulchynsky, V.V.
Maslyanchuk, O.L.
Paranchych, S.Yu.
Sklyarchuk, V.M.
Studies of CdHgTe as a material for x- and γ-ray detectors
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Kosyachenko, L.A.
Kulchynsky, V.V.
Maslyanchuk, O.L.
Paranchych, S.Yu.
Sklyarchuk, V.M.
author_sort Kosyachenko, L.A.
title Studies of CdHgTe as a material for x- and γ-ray detectors
title_short Studies of CdHgTe as a material for x- and γ-ray detectors
title_full Studies of CdHgTe as a material for x- and γ-ray detectors
title_fullStr Studies of CdHgTe as a material for x- and γ-ray detectors
title_full_unstemmed Studies of CdHgTe as a material for x- and γ-ray detectors
title_sort studies of cdhgte as a material for x- and γ-ray detectors
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/118001
citation_txt Studies of CdHgTe as a material for x- and γ-ray detectors / L.A. Kosyachenko, V.V. Kulchynsky, O.L. Maslyanchuk, S.Yu. Paranchych, V.M. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 227-232. — Бібліогр.: 19 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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