Studies of CdHgTe as a material for x- and γ-ray detectors
Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and compensation degree, as well as the carrier lifetime and surface-recombination vel...
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Дата: | 2003 |
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Автори: | , , , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118001 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Studies of CdHgTe as a material for x- and γ-ray detectors / L.A. Kosyachenko, V.V. Kulchynsky, O.L. Maslyanchuk, S.Yu. Paranchych, V.M. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 227-232. — Бібліогр.: 19 назв. — англ. |
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irk-123456789-1180012017-05-29T03:05:55Z Studies of CdHgTe as a material for x- and γ-ray detectors Kosyachenko, L.A. Kulchynsky, V.V. Maslyanchuk, O.L. Paranchych, S.Yu. Sklyarchuk, V.M. Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and compensation degree, as well as the carrier lifetime and surface-recombination velocity have been found. 2003 Article Studies of CdHgTe as a material for x- and γ-ray detectors / L.A. Kosyachenko, V.V. Kulchynsky, O.L. Maslyanchuk, S.Yu. Paranchych, V.M. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 227-232. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 72.80.Ey http://dspace.nbuv.gov.ua/handle/123456789/118001 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and compensation degree, as well as the carrier lifetime and surface-recombination velocity have been found. |
format |
Article |
author |
Kosyachenko, L.A. Kulchynsky, V.V. Maslyanchuk, O.L. Paranchych, S.Yu. Sklyarchuk, V.M. |
spellingShingle |
Kosyachenko, L.A. Kulchynsky, V.V. Maslyanchuk, O.L. Paranchych, S.Yu. Sklyarchuk, V.M. Studies of CdHgTe as a material for x- and γ-ray detectors Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Kosyachenko, L.A. Kulchynsky, V.V. Maslyanchuk, O.L. Paranchych, S.Yu. Sklyarchuk, V.M. |
author_sort |
Kosyachenko, L.A. |
title |
Studies of CdHgTe as a material for x- and γ-ray detectors |
title_short |
Studies of CdHgTe as a material for x- and γ-ray detectors |
title_full |
Studies of CdHgTe as a material for x- and γ-ray detectors |
title_fullStr |
Studies of CdHgTe as a material for x- and γ-ray detectors |
title_full_unstemmed |
Studies of CdHgTe as a material for x- and γ-ray detectors |
title_sort |
studies of cdhgte as a material for x- and γ-ray detectors |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2003 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/118001 |
citation_txt |
Studies of CdHgTe as a material for x- and γ-ray detectors / L.A. Kosyachenko, V.V. Kulchynsky, O.L. Maslyanchuk, S.Yu. Paranchych, V.M. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 227-232. — Бібліогр.: 19 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
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first_indexed |
2023-10-18T20:31:06Z |
last_indexed |
2023-10-18T20:31:06Z |
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