Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties

Single crystals of Cd₁₋x₋yMnyHgxTe:V (х = 0.05; у = 0.03-0.07, NV = 1∙10¹⁹ cm⁻³) have been grown and their electrical and optical properties have been studied. The transmission spectra of the samples with the composition x = 0.05; y = 0.07 were characterized by the minimum in the 3.5-5.5 μm spectral...

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Дата:2003
Автори: Paranchych, S.Yu., Paranchych, L.D., Tanasyuk, Yu.V., Romanyuk, V.R., Makogonenko, V.M., Yurtsenyuk, R.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118005
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties / S.Yu. Paranchych, L.D. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, V.M. Makogonenko, R.M. Yurtsenyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 153-155. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1180052017-05-29T03:05:40Z Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties Paranchych, S.Yu. Paranchych, L.D. Tanasyuk, Yu.V. Romanyuk, V.R. Makogonenko, V.M. Yurtsenyuk, R.M. Single crystals of Cd₁₋x₋yMnyHgxTe:V (х = 0.05; у = 0.03-0.07, NV = 1∙10¹⁹ cm⁻³) have been grown and their electrical and optical properties have been studied. The transmission spectra of the samples with the composition x = 0.05; y = 0.07 were characterized by the minimum in the 3.5-5.5 μm spectral range. In order to understand the nature of it the energy diagram of vanadium levels has been considered. The band gap of the studied solid solutions with different manganese content has been found from the absorption coefficient spectra and compared with those calculated. 2003 Article Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties / S.Yu. Paranchych, L.D. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, V.M. Makogonenko, R.M. Yurtsenyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 153-155. — Бібліогр.: 15 назв. — англ. 1560-8034 http://dspace.nbuv.gov.ua/handle/123456789/118005 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Single crystals of Cd₁₋x₋yMnyHgxTe:V (х = 0.05; у = 0.03-0.07, NV = 1∙10¹⁹ cm⁻³) have been grown and their electrical and optical properties have been studied. The transmission spectra of the samples with the composition x = 0.05; y = 0.07 were characterized by the minimum in the 3.5-5.5 μm spectral range. In order to understand the nature of it the energy diagram of vanadium levels has been considered. The band gap of the studied solid solutions with different manganese content has been found from the absorption coefficient spectra and compared with those calculated.
format Article
author Paranchych, S.Yu.
Paranchych, L.D.
Tanasyuk, Yu.V.
Romanyuk, V.R.
Makogonenko, V.M.
Yurtsenyuk, R.M.
spellingShingle Paranchych, S.Yu.
Paranchych, L.D.
Tanasyuk, Yu.V.
Romanyuk, V.R.
Makogonenko, V.M.
Yurtsenyuk, R.M.
Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Paranchych, S.Yu.
Paranchych, L.D.
Tanasyuk, Yu.V.
Romanyuk, V.R.
Makogonenko, V.M.
Yurtsenyuk, R.M.
author_sort Paranchych, S.Yu.
title Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
title_short Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
title_full Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
title_fullStr Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
title_full_unstemmed Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
title_sort growing cd₁₋x₋ymnyhgxte single crystals and their optoelectronic properties
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/118005
citation_txt Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties / S.Yu. Paranchych, L.D. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, V.M. Makogonenko, R.M. Yurtsenyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 153-155. — Бібліогр.: 15 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:31:07Z
last_indexed 2023-10-18T20:31:07Z
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