One-dimensional warm electron transport in GaN quantum well wires at low temperatures

• Дата: 2003
• Автор: Sarkar, S.K.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/118009
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: One-dimensional warm electron transport in GaN quantum well wires at low temperatures / S.K. Sarkar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 264-268. — Бібліогр.: 26 назв. — англ.

One-dimensional warm electron coefficient (β) and Ohmic mobility μ₀ in a square quantum well wire of GaN are studied for lattice temperatures in the range of 4-10 K, which are important from the application point of view. Electron scattering via deformation potential acoustic, piezoelectric, and ionized impurity are incorporated in the calculations. Carrier distribution is considered to be a heated Fermi-Dirac. Ohmic mobility (μ₀) is larger for a quantum well wires of greater width and decreases slowly with the rise of lattice temperature. β is negative, and its magnitude falls with increasing lattice temperature and is greater for wider width of the wire. The computed results are discussed in terms of the interplay of the various scattering mechanisms depending upon the model parameters.