One-dimensional warm electron transport in GaN quantum well wires at low temperatures
One-dimensional warm electron coefficient (β) and Ohmic mobility μ₀ in a square quantum well wire of GaN are studied for lattice temperatures in the range of 4-10 K, which are important from the application point of view. Electron scattering via deformation potential acoustic, piezoelectric, and ion...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| Дата: | 2003 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118009 |
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| Цитувати: | One-dimensional warm electron transport in GaN quantum well wires at low temperatures / S.K. Sarkar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 264-268. — Бібліогр.: 26 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118009 |
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dspace |
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irk-123456789-1180092017-05-29T03:05:58Z One-dimensional warm electron transport in GaN quantum well wires at low temperatures Sarkar, S.K. One-dimensional warm electron coefficient (β) and Ohmic mobility μ₀ in a square quantum well wire of GaN are studied for lattice temperatures in the range of 4-10 K, which are important from the application point of view. Electron scattering via deformation potential acoustic, piezoelectric, and ionized impurity are incorporated in the calculations. Carrier distribution is considered to be a heated Fermi-Dirac. Ohmic mobility (μ₀) is larger for a quantum well wires of greater width and decreases slowly with the rise of lattice temperature. β is negative, and its magnitude falls with increasing lattice temperature and is greater for wider width of the wire. The computed results are discussed in terms of the interplay of the various scattering mechanisms depending upon the model parameters. 2003 Article One-dimensional warm electron transport in GaN quantum well wires at low temperatures / S.K. Sarkar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 264-268. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS: 72.20 Ht, 73.20 Dx, 73.60 Br. http://dspace.nbuv.gov.ua/handle/123456789/118009 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
One-dimensional warm electron coefficient (β) and Ohmic mobility μ₀ in a square quantum well wire of GaN are studied for lattice temperatures in the range of 4-10 K, which are important from the application point of view. Electron scattering via deformation potential acoustic, piezoelectric, and ionized impurity are incorporated in the calculations. Carrier distribution is considered to be a heated Fermi-Dirac. Ohmic mobility (μ₀) is larger for a quantum well wires of greater width and decreases slowly with the rise of lattice temperature. β is negative, and its magnitude falls with increasing lattice temperature and is greater for wider width of the wire. The computed results are discussed in terms of the interplay of the various scattering mechanisms depending upon the model parameters. |
| format |
Article |
| author |
Sarkar, S.K. |
| spellingShingle |
Sarkar, S.K. One-dimensional warm electron transport in GaN quantum well wires at low temperatures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sarkar, S.K. |
| author_sort |
Sarkar, S.K. |
| title |
One-dimensional warm electron transport in GaN quantum well wires at low temperatures |
| title_short |
One-dimensional warm electron transport in GaN quantum well wires at low temperatures |
| title_full |
One-dimensional warm electron transport in GaN quantum well wires at low temperatures |
| title_fullStr |
One-dimensional warm electron transport in GaN quantum well wires at low temperatures |
| title_full_unstemmed |
One-dimensional warm electron transport in GaN quantum well wires at low temperatures |
| title_sort |
one-dimensional warm electron transport in gan quantum well wires at low temperatures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118009 |
| citation_txt |
One-dimensional warm electron transport in GaN quantum well wires at low temperatures / S.K. Sarkar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 264-268. — Бібліогр.: 26 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT sarkarsk onedimensionalwarmelectrontransportinganquantumwellwiresatlowtemperatures |
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2023-10-18T20:31:07Z |
| last_indexed |
2023-10-18T20:31:07Z |
| _version_ |
1796150410310844416 |