Characteristics of confined exciton states in silicon quantum wires

Characteristics of confined exciton states in silicon quantum wires

We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within effective mass and classical image force approximations. As a result, e...

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Дата:2003
Автори: Korbutyak, D.V., Kryuchenko, Yu.V., Kupchak, I.M., Sachenko, A.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118013
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Characteristics of confined exciton states in silicon quantum wires / D.V. Korbutyak, Yu.V. Kryuchenko, I.M. Kupchak, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 172-182. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118013
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spelling irk-123456789-1180132017-05-29T03:05:45Z Characteristics of confined exciton states in silicon quantum wires Korbutyak, D.V. Kryuchenko, Yu.V. Kupchak, I.M. Sachenko, A.V. We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within effective mass and classical image force approximations. As a result, exciton binding energy, total energy of the exciton transition, radiative recombination time, intensity and internal quantum efficiency of the exciton photoluminescence (PL) in quantum wires (QW) have been obtained as functions of wire thickness, dielectric constants of adjacent materials, conduction and valence band-offsets. It was shown that even at room temperatures and moderate intensities of laser excitation the quantum efficiency of the exciton PL can achieve very high values (tens of %) in the case of extremely thin QWs (with thickness 1 - 3 nm). Moreover, according to theory, the exciton recombination time and the quantum efficiency have to be oscillating functions of QW thickness in thickness range 1 - 5 nm due to the indirect band-gap nature of silicon material. 2003 Article Characteristics of confined exciton states in silicon quantum wires / D.V. Korbutyak, Yu.V. Kryuchenko, I.M. Kupchak, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 172-182. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS : 73.20.Dx, 78.66.-w http://dspace.nbuv.gov.ua/handle/123456789/118013 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within effective mass and classical image force approximations. As a result, exciton binding energy, total energy of the exciton transition, radiative recombination time, intensity and internal quantum efficiency of the exciton photoluminescence (PL) in quantum wires (QW) have been obtained as functions of wire thickness, dielectric constants of adjacent materials, conduction and valence band-offsets. It was shown that even at room temperatures and moderate intensities of laser excitation the quantum efficiency of the exciton PL can achieve very high values (tens of %) in the case of extremely thin QWs (with thickness 1 - 3 nm). Moreover, according to theory, the exciton recombination time and the quantum efficiency have to be oscillating functions of QW thickness in thickness range 1 - 5 nm due to the indirect band-gap nature of silicon material.
format Article
author Korbutyak, D.V.
Kryuchenko, Yu.V.
Kupchak, I.M.
Sachenko, A.V.
spellingShingle Korbutyak, D.V.
Kryuchenko, Yu.V.
Kupchak, I.M.
Sachenko, A.V.
Characteristics of confined exciton states in silicon quantum wires
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Korbutyak, D.V.
Kryuchenko, Yu.V.
Kupchak, I.M.
Sachenko, A.V.
author_sort Korbutyak, D.V.
title Characteristics of confined exciton states in silicon quantum wires
title_short Characteristics of confined exciton states in silicon quantum wires
title_full Characteristics of confined exciton states in silicon quantum wires
title_fullStr Characteristics of confined exciton states in silicon quantum wires
title_full_unstemmed Characteristics of confined exciton states in silicon quantum wires
title_sort characteristics of confined exciton states in silicon quantum wires
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/118013
citation_txt Characteristics of confined exciton states in silicon quantum wires / D.V. Korbutyak, Yu.V. Kryuchenko, I.M. Kupchak, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 172-182. — Бібліогр.: 16 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT kryuchenkoyuv characteristicsofconfinedexcitonstatesinsiliconquantumwires
AT kupchakim characteristicsofconfinedexcitonstatesinsiliconquantumwires
AT sachenkoav characteristicsofconfinedexcitonstatesinsiliconquantumwires
first_indexed 2023-10-18T20:31:08Z
last_indexed 2023-10-18T20:31:08Z
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