Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations
Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. Layers were obtained for various substrate temperatures varying in the rang...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2003 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118014 |
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| Цитувати: | Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations / L. Pyziak, W. Obermayr, K. Zembrowska, M. Kuzma // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 183-188. — Бібліогр.: 40 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118014 |
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dspace |
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irk-123456789-1180142017-05-29T03:05:46Z Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations Pyziak, L. Obermayr, W. Zembrowska, K. Kuzma, M. Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. Layers were obtained for various substrate temperatures varying in the range from 600 K to 800 K. The topography of plane clusters formed were characterised by their fractal box-like dimension. The relation between this dimension and the shape of the clusters was addressed. 2003 Article Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations / L. Pyziak, W. Obermayr, K. Zembrowska, M. Kuzma // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 183-188. — Бібліогр.: 40 назв. — англ. 1560-8034 PACS: 02.70.Uu, 61.43.Bn http://dspace.nbuv.gov.ua/handle/123456789/118014 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. Layers were obtained for various substrate temperatures varying in the range from 600 K to 800 K. The topography of plane clusters formed were characterised by their fractal box-like dimension. The relation between this dimension and the shape of the clusters was addressed. |
| format |
Article |
| author |
Pyziak, L. Obermayr, W. Zembrowska, K. Kuzma, M. |
| spellingShingle |
Pyziak, L. Obermayr, W. Zembrowska, K. Kuzma, M. Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Pyziak, L. Obermayr, W. Zembrowska, K. Kuzma, M. |
| author_sort |
Pyziak, L. |
| title |
Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations |
| title_short |
Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations |
| title_full |
Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations |
| title_fullStr |
Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations |
| title_full_unstemmed |
Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations |
| title_sort |
topography of si epitaxial monolayers obtained on si (001) substrate by computer simulations |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118014 |
| citation_txt |
Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations / L. Pyziak, W. Obermayr, K. Zembrowska, M. Kuzma // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 183-188. — Бібліогр.: 40 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:31:08Z |
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2023-10-18T20:31:08Z |
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