Temperature dependence of luminescence pecularities in oxygen doped ZnTe films
Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated. The model explaining non-monotonous behaviour of curve temperature dependence for the "oxygen" band (λmax = 650...
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| Дата: | 2003 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118021 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Temperature dependence of luminescence pecularities in oxygen doped ZnTe films / N.V. Malushin, V.M. Skobeeva, V.A. Smyntyna // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 214-216. — Бібліогр.: 3 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118021 |
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| record_format |
dspace |
| spelling |
irk-123456789-1180212017-05-29T03:05:43Z Temperature dependence of luminescence pecularities in oxygen doped ZnTe films Malushin, N.V. Skobeeva, V.M. Smyntyna, V.A. Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated. The model explaining non-monotonous behaviour of curve temperature dependence for the "oxygen" band (λmax = 650 nm) is offered. According to this model, during quenching luminescence, the centers of a luminescence and those of the majority carriers capture participate. Determined are the values of the activation energy and concentration of the appropriate centers at which abnormal dependence of luminescence intensity on the temperature is observed. 2003 Article Temperature dependence of luminescence pecularities in oxygen doped ZnTe films / N.V. Malushin, V.M. Skobeeva, V.A. Smyntyna // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 214-216. — Бібліогр.: 3 назв. — англ. 1560-8034 PACS: 78.60.-b, 78.66.-w http://dspace.nbuv.gov.ua/handle/123456789/118021 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated. The model explaining non-monotonous behaviour of curve temperature dependence for the "oxygen" band (λmax = 650 nm) is offered. According to this model, during quenching luminescence, the centers of a luminescence and those of the majority carriers capture participate. Determined are the values of the activation energy and concentration of the appropriate centers at which abnormal dependence of luminescence intensity on the temperature is observed. |
| format |
Article |
| author |
Malushin, N.V. Skobeeva, V.M. Smyntyna, V.A. |
| spellingShingle |
Malushin, N.V. Skobeeva, V.M. Smyntyna, V.A. Temperature dependence of luminescence pecularities in oxygen doped ZnTe films Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Malushin, N.V. Skobeeva, V.M. Smyntyna, V.A. |
| author_sort |
Malushin, N.V. |
| title |
Temperature dependence of luminescence pecularities in oxygen doped ZnTe films |
| title_short |
Temperature dependence of luminescence pecularities in oxygen doped ZnTe films |
| title_full |
Temperature dependence of luminescence pecularities in oxygen doped ZnTe films |
| title_fullStr |
Temperature dependence of luminescence pecularities in oxygen doped ZnTe films |
| title_full_unstemmed |
Temperature dependence of luminescence pecularities in oxygen doped ZnTe films |
| title_sort |
temperature dependence of luminescence pecularities in oxygen doped znte films |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118021 |
| citation_txt |
Temperature dependence of luminescence pecularities in oxygen doped ZnTe films / N.V. Malushin, V.M. Skobeeva, V.A. Smyntyna // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 214-216. — Бібліогр.: 3 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT malushinnv temperaturedependenceofluminescencepecularitiesinoxygendopedzntefilms AT skobeevavm temperaturedependenceofluminescencepecularitiesinoxygendopedzntefilms AT smyntynava temperaturedependenceofluminescencepecularitiesinoxygendopedzntefilms |
| first_indexed |
2023-10-18T20:31:09Z |
| last_indexed |
2023-10-18T20:31:09Z |
| _version_ |
1796150411576475648 |