Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures
Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and increasing mobility of 2D electrons in InAs quantum wells. In the case of AlAs...
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| Дата: | 2003 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118031 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures / M.Ya. Valakh, V.V. Strelchuk, O.F. Kolomys, H.L. Hartnagel, J. Sigmund // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 287-293. — Бібліогр.: 34 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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dspace |
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irk-123456789-1180312017-05-29T03:02:43Z Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures Valakh, M.Ya. Strelchuk, V.V. Kolomys, O.F. Hartnagel, H.L. Sigmund, J. Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and increasing mobility of 2D electrons in InAs quantum wells. In the case of AlAs interface at the heterojunction quantum well - barrier, the formation of AlSb₁₋xAsx solid solution takes place. Revealed are considerable concentration changes for 2D electrons at low temperatures in dependency on the excitation quantum energy. 2003 Article Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures / M.Ya. Valakh, V.V. Strelchuk, O.F. Kolomys, H.L. Hartnagel, J. Sigmund // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 287-293. — Бібліогр.: 34 назв. — англ. 1560-8034 PACS: 63.22.+m, 72.10.Di, 78.30.-j http://dspace.nbuv.gov.ua/handle/123456789/118031 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and increasing mobility of 2D electrons in InAs quantum wells. In the case of AlAs interface at the heterojunction quantum well - barrier, the formation of AlSb₁₋xAsx solid solution takes place. Revealed are considerable concentration changes for 2D electrons at low temperatures in dependency on the excitation quantum energy. |
| format |
Article |
| author |
Valakh, M.Ya. Strelchuk, V.V. Kolomys, O.F. Hartnagel, H.L. Sigmund, J. |
| spellingShingle |
Valakh, M.Ya. Strelchuk, V.V. Kolomys, O.F. Hartnagel, H.L. Sigmund, J. Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Valakh, M.Ya. Strelchuk, V.V. Kolomys, O.F. Hartnagel, H.L. Sigmund, J. |
| author_sort |
Valakh, M.Ya. |
| title |
Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures |
| title_short |
Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures |
| title_full |
Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures |
| title_fullStr |
Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures |
| title_full_unstemmed |
Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures |
| title_sort |
resonance raman scattering by intersubband plasmon-phonon excitations in inas/alsb structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118031 |
| citation_txt |
Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures / M.Ya. Valakh, V.V. Strelchuk, O.F. Kolomys, H.L. Hartnagel, J. Sigmund // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 287-293. — Бібліогр.: 34 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:31:10Z |
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