Regularities of visible photoluminescence creation in low-dimensional silicon structures

• Дата: 2003
• Автор: Manoilov, E.G.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/118034
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Regularities of visible photoluminescence creation in low-dimensional silicon structures / E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 303-306. — Бібліогр.: 9 назв. — англ.

The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie in the energy range 1.4-3.2 eV with a peak at 2.4-2.8 eV. At the longest times of tens of microseconds, the spectra become narrower, with a peak at 1.6 eV. At intermediate times, two bands are observed: low-energy (1.6 eV) and high-energy, with the peak shifting from 2.7 to 2.1 eV with time increasing. The data are discussed in terms of quantum confinement, dielectric amplification, and manifestation of kinetically coupled electron-hole and exciton subsystems. Ions and atoms of gold passivate dangling bonds at Si surface and serve as catalysts for oxidation of nanocrystals.