Regularities of visible photoluminescence creation in low-dimensional silicon structures
The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie in the energy range 1.4-3.2 eV with a peak at 2.4-2.8 eV. At the longest times...
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| Дата: | 2003 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118034 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Regularities of visible photoluminescence creation in low-dimensional silicon structures / E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 303-306. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1180342017-05-29T03:02:48Z Regularities of visible photoluminescence creation in low-dimensional silicon structures Manoilov, E.G. The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie in the energy range 1.4-3.2 eV with a peak at 2.4-2.8 eV. At the longest times of tens of microseconds, the spectra become narrower, with a peak at 1.6 eV. At intermediate times, two bands are observed: low-energy (1.6 eV) and high-energy, with the peak shifting from 2.7 to 2.1 eV with time increasing. The data are discussed in terms of quantum confinement, dielectric amplification, and manifestation of kinetically coupled electron-hole and exciton subsystems. Ions and atoms of gold passivate dangling bonds at Si surface and serve as catalysts for oxidation of nanocrystals. 2003 Article Regularities of visible photoluminescence creation in low-dimensional silicon structures / E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 303-306. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 78.47.+p, 78.55.A, 78.67.Bf http://dspace.nbuv.gov.ua/handle/123456789/118034 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie in the energy range 1.4-3.2 eV with a peak at 2.4-2.8 eV. At the longest times of tens of microseconds, the spectra become narrower, with a peak at 1.6 eV. At intermediate times, two bands are observed: low-energy (1.6 eV) and high-energy, with the peak shifting from 2.7 to 2.1 eV with time increasing. The data are discussed in terms of quantum confinement, dielectric amplification, and manifestation of kinetically coupled electron-hole and exciton subsystems. Ions and atoms of gold passivate dangling bonds at Si surface and serve as catalysts for oxidation of nanocrystals. |
| format |
Article |
| author |
Manoilov, E.G. |
| spellingShingle |
Manoilov, E.G. Regularities of visible photoluminescence creation in low-dimensional silicon structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Manoilov, E.G. |
| author_sort |
Manoilov, E.G. |
| title |
Regularities of visible photoluminescence creation in low-dimensional silicon structures |
| title_short |
Regularities of visible photoluminescence creation in low-dimensional silicon structures |
| title_full |
Regularities of visible photoluminescence creation in low-dimensional silicon structures |
| title_fullStr |
Regularities of visible photoluminescence creation in low-dimensional silicon structures |
| title_full_unstemmed |
Regularities of visible photoluminescence creation in low-dimensional silicon structures |
| title_sort |
regularities of visible photoluminescence creation in low-dimensional silicon structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118034 |
| citation_txt |
Regularities of visible photoluminescence creation in low-dimensional silicon structures / E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 303-306. — Бібліогр.: 9 назв. — англ. |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:31:11Z |
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