Avalanche multiplication of charge carriers in nanostructured porous silicon
The phenomenon of avalanche multiplication of charge carriers in Al/PS-(c-Si) sandwich-structures based on nanostructured porous silicon (PS) is studied. Experimentally received dependences of ionization rates on intensity of an electrical field correspond to the diffusion mechanism of electron-hole...
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| Дата: | 2003 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118035 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Avalanche multiplication of charge carriers in nanostructured porous silicon / D.F. Timokhov, F.P. Timokhov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 307-310. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118035 |
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dspace |
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irk-123456789-1180352017-05-29T03:03:03Z Avalanche multiplication of charge carriers in nanostructured porous silicon Timokhov, D.F. Timokhov, F.P. The phenomenon of avalanche multiplication of charge carriers in Al/PS-(c-Si) sandwich-structures based on nanostructured porous silicon (PS) is studied. Experimentally received dependences of ionization rates on intensity of an electrical field correspond to the diffusion mechanism of electron-hole pairs heating up to a threshold of ionization. The distinction of effective factors of shock ionization for electrons and holes is unsignificant. The estimation of length of free run of hot electrons is carried out at scattering of energy on the optical phonons. 2003 Article Avalanche multiplication of charge carriers in nanostructured porous silicon / D.F. Timokhov, F.P. Timokhov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 307-310. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 72.80.Cw; 72.80.Ng; 72.40.+w; 73.40.Gk http://dspace.nbuv.gov.ua/handle/123456789/118035 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The phenomenon of avalanche multiplication of charge carriers in Al/PS-(c-Si) sandwich-structures based on nanostructured porous silicon (PS) is studied. Experimentally received dependences of ionization rates on intensity of an electrical field correspond to the diffusion mechanism of electron-hole pairs heating up to a threshold of ionization. The distinction of effective factors of shock ionization for electrons and holes is unsignificant. The estimation of length of free run of hot electrons is carried out at scattering of energy on the optical phonons. |
| format |
Article |
| author |
Timokhov, D.F. Timokhov, F.P. |
| spellingShingle |
Timokhov, D.F. Timokhov, F.P. Avalanche multiplication of charge carriers in nanostructured porous silicon Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Timokhov, D.F. Timokhov, F.P. |
| author_sort |
Timokhov, D.F. |
| title |
Avalanche multiplication of charge carriers in nanostructured porous silicon |
| title_short |
Avalanche multiplication of charge carriers in nanostructured porous silicon |
| title_full |
Avalanche multiplication of charge carriers in nanostructured porous silicon |
| title_fullStr |
Avalanche multiplication of charge carriers in nanostructured porous silicon |
| title_full_unstemmed |
Avalanche multiplication of charge carriers in nanostructured porous silicon |
| title_sort |
avalanche multiplication of charge carriers in nanostructured porous silicon |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118035 |
| citation_txt |
Avalanche multiplication of charge carriers in nanostructured porous silicon / D.F. Timokhov, F.P. Timokhov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 307-310. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT timokhovdf avalanchemultiplicationofchargecarriersinnanostructuredporoussilicon AT timokhovfp avalanchemultiplicationofchargecarriersinnanostructuredporoussilicon |
| first_indexed |
2023-10-18T20:31:11Z |
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2023-10-18T20:31:11Z |
| _version_ |
1796150413062307840 |