The features of phonon component of linear dichroism in uniaxially strained silicon crystals
Linear dichroism induced by uniaxial compression strain in semiconductor silicon samples was studied with modulation spectroscopy technique using modulation of electromagnetic radiation polarization. We obtained a spectral characteristic of the difference between transmissions for polarizations para...
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| Дата: | 2003 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118038 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The features of phonon component of linear dichroism in uniaxially strained silicon crystals / B.K. Serdega, E.F. Venger, I.E. Matyash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 319-323. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118038 |
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dspace |
| spelling |
irk-123456789-1180382017-05-29T03:03:08Z The features of phonon component of linear dichroism in uniaxially strained silicon crystals Serdega, B.K. Venger, E.F. Matyash, I.E. Linear dichroism induced by uniaxial compression strain in semiconductor silicon samples was studied with modulation spectroscopy technique using modulation of electromagnetic radiation polarization. We obtained a spectral characteristic of the difference between transmissions for polarizations parallel to the different axes of the optical indicatrix of the sample studied in the edge absorption region. A fine structure of characteristics was found in which one can observe event of acoustic phonons in the interband transitions. From the results of measurements of the total and difference transmission characteristics we calculated spectral dependence of linear dichroism. It has singularities related to the indirect interband transitions. 2003 Article The features of phonon component of linear dichroism in uniaxially strained silicon crystals / B.K. Serdega, E.F. Venger, I.E. Matyash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 319-323. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 78.20.C http://dspace.nbuv.gov.ua/handle/123456789/118038 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Linear dichroism induced by uniaxial compression strain in semiconductor silicon samples was studied with modulation spectroscopy technique using modulation of electromagnetic radiation polarization. We obtained a spectral characteristic of the difference between transmissions for polarizations parallel to the different axes of the optical indicatrix of the sample studied in the edge absorption region. A fine structure of characteristics was found in which one can observe event of acoustic phonons in the interband transitions. From the results of measurements of the total and difference transmission characteristics we calculated spectral dependence of linear dichroism. It has singularities related to the indirect interband transitions. |
| format |
Article |
| author |
Serdega, B.K. Venger, E.F. Matyash, I.E. |
| spellingShingle |
Serdega, B.K. Venger, E.F. Matyash, I.E. The features of phonon component of linear dichroism in uniaxially strained silicon crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Serdega, B.K. Venger, E.F. Matyash, I.E. |
| author_sort |
Serdega, B.K. |
| title |
The features of phonon component of linear dichroism in uniaxially strained silicon crystals |
| title_short |
The features of phonon component of linear dichroism in uniaxially strained silicon crystals |
| title_full |
The features of phonon component of linear dichroism in uniaxially strained silicon crystals |
| title_fullStr |
The features of phonon component of linear dichroism in uniaxially strained silicon crystals |
| title_full_unstemmed |
The features of phonon component of linear dichroism in uniaxially strained silicon crystals |
| title_sort |
features of phonon component of linear dichroism in uniaxially strained silicon crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118038 |
| citation_txt |
The features of phonon component of linear dichroism in uniaxially strained silicon crystals / B.K. Serdega, E.F. Venger, I.E. Matyash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 319-323. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT serdegabk thefeaturesofphononcomponentoflineardichroisminuniaxiallystrainedsiliconcrystals AT vengeref thefeaturesofphononcomponentoflineardichroisminuniaxiallystrainedsiliconcrystals AT matyashie thefeaturesofphononcomponentoflineardichroisminuniaxiallystrainedsiliconcrystals AT serdegabk featuresofphononcomponentoflineardichroisminuniaxiallystrainedsiliconcrystals AT vengeref featuresofphononcomponentoflineardichroisminuniaxiallystrainedsiliconcrystals AT matyashie featuresofphononcomponentoflineardichroisminuniaxiallystrainedsiliconcrystals |
| first_indexed |
2023-10-18T20:31:11Z |
| last_indexed |
2023-10-18T20:31:11Z |
| _version_ |
1796150413490126848 |