Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface
We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and the light polarization E⊥C and determined the energy position of the exciton ban...
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Дата: | 2003 |
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Автори: | , , , |
Формат: | Стаття |
Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118040 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface / V.G. Dorogan, V.O. Zhydkov, F.V. Motsnyi, O.M. Smolanka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 346-348. — Бібліогр.: 12 назв. — англ. |
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irk-123456789-1180402017-05-29T03:03:35Z Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface Dorogan, V.G. Zhydkov, V.O. Motsnyi, F.V. Smolanka, O.M. We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and the light polarization E⊥C and determined the energy position of the exciton bands and the parameters of the critical points. The obtained data allowed us to conclude the exciton spectra of this semiconductor can be described in terms of a single Wannier series with a large ground-state anomaly caused by a repulsive central-cell correction due to the cationic character of the exciton. 2003 Article Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface / V.G. Dorogan, V.O. Zhydkov, F.V. Motsnyi, O.M. Smolanka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 346-348. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 71.35.-y, 78.20.Ci, 78.20.Bh http://dspace.nbuv.gov.ua/handle/123456789/118040 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
language |
English |
description |
We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and the light polarization E⊥C and determined the energy position of the exciton bands and the parameters of the critical points. The obtained data allowed us to conclude the exciton spectra of this semiconductor can be described in terms of a single Wannier series with a large ground-state anomaly caused by a repulsive central-cell correction due to the cationic character of the exciton. |
format |
Article |
author |
Dorogan, V.G. Zhydkov, V.O. Motsnyi, F.V. Smolanka, O.M. |
spellingShingle |
Dorogan, V.G. Zhydkov, V.O. Motsnyi, F.V. Smolanka, O.M. Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Dorogan, V.G. Zhydkov, V.O. Motsnyi, F.V. Smolanka, O.M. |
author_sort |
Dorogan, V.G. |
title |
Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
title_short |
Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
title_full |
Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
title_fullStr |
Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
title_full_unstemmed |
Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface |
title_sort |
analysis of exciton reflection spectrum of 2h-pbi₂ layered single crystals with atomically clean surface |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2003 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/118040 |
citation_txt |
Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface / V.G. Dorogan, V.O. Zhydkov, F.V. Motsnyi, O.M. Smolanka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 346-348. — Бібліогр.: 12 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT doroganvg analysisofexcitonreflectionspectrumof2hpbi2layeredsinglecrystalswithatomicallycleansurface AT zhydkovvo analysisofexcitonreflectionspectrumof2hpbi2layeredsinglecrystalswithatomicallycleansurface AT motsnyifv analysisofexcitonreflectionspectrumof2hpbi2layeredsinglecrystalswithatomicallycleansurface AT smolankaom analysisofexcitonreflectionspectrumof2hpbi2layeredsinglecrystalswithatomicallycleansurface |
first_indexed |
2023-10-18T20:31:12Z |
last_indexed |
2023-10-18T20:31:12Z |
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1796150413700890624 |