Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface

We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and the light polarization E⊥C and determined the energy position of the exciton ban...

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Дата:2003
Автори: Dorogan, V.G., Zhydkov, V.O., Motsnyi, F.V., Smolanka, O.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118040
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface / V.G. Dorogan, V.O. Zhydkov, F.V. Motsnyi, O.M. Smolanka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 346-348. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118040
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spelling irk-123456789-1180402017-05-29T03:03:35Z Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface Dorogan, V.G. Zhydkov, V.O. Motsnyi, F.V. Smolanka, O.M. We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and the light polarization E⊥C and determined the energy position of the exciton bands and the parameters of the critical points. The obtained data allowed us to conclude the exciton spectra of this semiconductor can be described in terms of a single Wannier series with a large ground-state anomaly caused by a repulsive central-cell correction due to the cationic character of the exciton. 2003 Article Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface / V.G. Dorogan, V.O. Zhydkov, F.V. Motsnyi, O.M. Smolanka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 346-348. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 71.35.-y, 78.20.Ci, 78.20.Bh http://dspace.nbuv.gov.ua/handle/123456789/118040 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and the light polarization E⊥C and determined the energy position of the exciton bands and the parameters of the critical points. The obtained data allowed us to conclude the exciton spectra of this semiconductor can be described in terms of a single Wannier series with a large ground-state anomaly caused by a repulsive central-cell correction due to the cationic character of the exciton.
format Article
author Dorogan, V.G.
Zhydkov, V.O.
Motsnyi, F.V.
Smolanka, O.M.
spellingShingle Dorogan, V.G.
Zhydkov, V.O.
Motsnyi, F.V.
Smolanka, O.M.
Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Dorogan, V.G.
Zhydkov, V.O.
Motsnyi, F.V.
Smolanka, O.M.
author_sort Dorogan, V.G.
title Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface
title_short Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface
title_full Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface
title_fullStr Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface
title_full_unstemmed Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface
title_sort analysis of exciton reflection spectrum of 2h-pbi₂ layered single crystals with atomically clean surface
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/118040
citation_txt Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface / V.G. Dorogan, V.O. Zhydkov, F.V. Motsnyi, O.M. Smolanka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 346-348. — Бібліогр.: 12 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT motsnyifv analysisofexcitonreflectionspectrumof2hpbi2layeredsinglecrystalswithatomicallycleansurface
AT smolankaom analysisofexcitonreflectionspectrumof2hpbi2layeredsinglecrystalswithatomicallycleansurface
first_indexed 2023-10-18T20:31:12Z
last_indexed 2023-10-18T20:31:12Z
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