X-ray photoelectron spectra and electronic structure of quasi-one-dimensional SbSeI crystals

The paper presents the X-ray photoelectron spectra (XPS) of the valence band (VB) and of the principal core levels from the (110) and (001) crystal surfaces for the quasi-one-dimensional high permittivity SbSeI single crystal isostructural to ferroelectric SbSI. The XPS were measured with monochroma...

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Збережено в:
Бібліографічні деталі
Дата:2007
Автори: Grigas, J., Talik, E., Adamiec, M., Lazauskas, V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики конденсованих систем НАН України 2007
Назва видання:Condensed Matter Physics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118065
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:X-ray photoelectron spectra and electronic structure of quasi-one-dimensional SbSeI crystals / J. Grigas, E. Talik, M. Adamiec, V. Lazauskas // Condensed Matter Physics. — 2007. — Т. 10, № 1(49). — С. 101-110. — Бібліогр.: 11 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:The paper presents the X-ray photoelectron spectra (XPS) of the valence band (VB) and of the principal core levels from the (110) and (001) crystal surfaces for the quasi-one-dimensional high permittivity SbSeI single crystal isostructural to ferroelectric SbSI. The XPS were measured with monochromatized Al Ka radiation in the energy range of 0–1400 eV at room temperature. The VB is located from 1.6 to 20 eV below the Fermi level. Experimental energies of the VB and core levels are compared with the results of theoretical ab initio calculations of the molecular model of the SbSeI crystal. The electronic structure of the VB is revealed. Shifts in the core-level binding energies of surface atoms relative to bulk ones, which show a dependency on surface crystallography, have been observed. The chemical shifts of the core levels (CL) in the SbSeI crystal for the Sb, I and Se states are obtained.