Atomic defects and physical-chemical properties of PbTe-InTe solid solutions
Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain experimental results by filling with indium atoms In⁺² <--> In⁺¹ In⁺³ (up t...
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| Дата: | 2003 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118073 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Atomic defects and physical-chemical properties of PbTe-InTe solid solutions / D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 454-457. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118073 |
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dspace |
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irk-123456789-1180732017-05-29T03:03:05Z Atomic defects and physical-chemical properties of PbTe-InTe solid solutions Freik, D.M. Boychuk, V.I. Mezhylovsjka, L.I. Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain experimental results by filling with indium atoms In⁺² <--> In⁺¹ In⁺³ (up to 3 mol. % InTe) octahedral hollows (IH) of close-packed arrangement of tellurium atoms in PbTe crystal lattice. At the greater content of indium telluride, the allocation of both In⁺¹ on OH, and In⁺³ on tetrahedral hollows (TH), accordingly, takes place. 2003 Article Atomic defects and physical-chemical properties of PbTe-InTe solid solutions / D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 454-457. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 64.90+b http://dspace.nbuv.gov.ua/handle/123456789/118073 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain experimental results by filling with indium atoms In⁺² <--> In⁺¹ In⁺³ (up to 3 mol. % InTe) octahedral hollows (IH) of close-packed arrangement of tellurium atoms in PbTe crystal lattice. At the greater content of indium telluride, the allocation of both In⁺¹ on OH, and In⁺³ on tetrahedral hollows (TH), accordingly, takes place. |
| format |
Article |
| author |
Freik, D.M. Boychuk, V.I. Mezhylovsjka, L.I. |
| spellingShingle |
Freik, D.M. Boychuk, V.I. Mezhylovsjka, L.I. Atomic defects and physical-chemical properties of PbTe-InTe solid solutions Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Freik, D.M. Boychuk, V.I. Mezhylovsjka, L.I. |
| author_sort |
Freik, D.M. |
| title |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| title_short |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| title_full |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| title_fullStr |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| title_full_unstemmed |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions |
| title_sort |
atomic defects and physical-chemical properties of pbte-inte solid solutions |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118073 |
| citation_txt |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions / D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 454-457. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT freikdm atomicdefectsandphysicalchemicalpropertiesofpbteintesolidsolutions AT boychukvi atomicdefectsandphysicalchemicalpropertiesofpbteintesolidsolutions AT mezhylovsjkali atomicdefectsandphysicalchemicalpropertiesofpbteintesolidsolutions |
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2023-10-18T20:31:16Z |
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2023-10-18T20:31:16Z |
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