Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds
Thermoluminescence of undoped and doped CaB₄O₇ with activators such as Cu and Mn has been investigated. The polycrystalline samples of undoped and doped CaB₄O₇ are prepared by melting method. The formation of CaB₄O₇ compound is checked by X-ray diffraction study and the compound is found to have ort...
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Дата: | 2003 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118092 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds / J. Manam, S.K. Sharma // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 465-470. — Бібліогр.: 10 назв. — англ. |
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irk-123456789-1180922017-05-29T03:05:07Z Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds Manam, J. Sharma, S.K. Thermoluminescence of undoped and doped CaB₄O₇ with activators such as Cu and Mn has been investigated. The polycrystalline samples of undoped and doped CaB₄O₇ are prepared by melting method. The formation of CaB₄O₇ compound is checked by X-ray diffraction study and the compound is found to have orthorhombic structure at room temperature. The TSL studies of undoped CaB₄O₇ sample shows two glow peaks at 150°C and 265°C and one shoulder at around 190°C. The TSL studies of Cu doped CaB₄O₇ sample also shows two glow peaks at 160°C and 270°C and a shoulder at around 230°C whereas the TSL glow curves of Mn doped CaB₄O₇ has only one single strong glow peak at 135°C. A comparative TSL studies of these compounds shows that CaB₄O₇ compound doped with Mn is the most sensitive and the TSL intensity is enhanced by about 40 times when compared with the TSL intensity of undoped CaB₄O₇ compound. The trap parameters namely order of kinetics (b), activation energy (E) and frequency factor (s) associated with the 135°C glow peak of CaB₄O₇: Mn phosphor are determined using isothermal decay and glow curve shape (Chen's) methods. 2003 Article Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds / J. Manam, S.K. Sharma // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 465-470. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 78.60.Kn, 61.10.Nz http://dspace.nbuv.gov.ua/handle/123456789/118092 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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language |
English |
description |
Thermoluminescence of undoped and doped CaB₄O₇ with activators such as Cu and Mn has been investigated. The polycrystalline samples of undoped and doped CaB₄O₇ are prepared by melting method. The formation of CaB₄O₇ compound is checked by X-ray diffraction study and the compound is found to have orthorhombic structure at room temperature. The TSL studies of undoped CaB₄O₇ sample shows two glow peaks at 150°C and 265°C and one shoulder at around 190°C. The TSL studies of Cu doped CaB₄O₇ sample also shows two glow peaks at 160°C and 270°C and a shoulder at around 230°C whereas the TSL glow curves of Mn doped CaB₄O₇ has only one single strong glow peak at 135°C. A comparative TSL studies of these compounds shows that CaB₄O₇ compound doped with Mn is the most sensitive and the TSL intensity is enhanced by about 40 times when compared with the TSL intensity of undoped CaB₄O₇ compound. The trap parameters namely order of kinetics (b), activation energy (E) and frequency factor (s) associated with the 135°C glow peak of CaB₄O₇:
Mn phosphor are determined using isothermal decay and glow curve shape (Chen's) methods. |
format |
Article |
author |
Manam, J. Sharma, S.K. |
spellingShingle |
Manam, J. Sharma, S.K. Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Manam, J. Sharma, S.K. |
author_sort |
Manam, J. |
title |
Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds |
title_short |
Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds |
title_full |
Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds |
title_fullStr |
Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds |
title_full_unstemmed |
Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds |
title_sort |
thermally stimulated luminescence studies of undoped and doped cab₄o₇ compounds |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2003 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/118092 |
citation_txt |
Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds / J. Manam, S.K. Sharma // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 465-470. — Бібліогр.: 10 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT manamj thermallystimulatedluminescencestudiesofundopedanddopedcab4o7compounds AT sharmask thermallystimulatedluminescencestudiesofundopedanddopedcab4o7compounds |
first_indexed |
2023-10-18T20:31:19Z |
last_indexed |
2023-10-18T20:31:19Z |
_version_ |
1796150419198574592 |