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Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure

Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure

Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore more porous than the traditional silicon...

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Main Authors: Aw, K.C., Ibrahim, K.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118103
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spelling irk-123456789-1181032017-05-29T03:03:10Z Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure Aw, K.C. Ibrahim, K. Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore more porous than the traditional silicon dioxide (SiO₂) film and could pose reliability issues. This paper is an extension to previous paper [1], which reported that evaporated copper (Cu) onto spin-on MSQ has high leakage current and provides two alternative models with the aid of energy band diagrams to describe the effect of evaporated Cu onto spin-on MSQ using Metal Oxide Semiconductor capacitor (MOSC) structure. 2003 Article Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure / K.C. Aw, K. Ibrahim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 524-527. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 42.55 Rz http://dspace.nbuv.gov.ua/handle/123456789/118103 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore more porous than the traditional silicon dioxide (SiO₂) film and could pose reliability issues. This paper is an extension to previous paper [1], which reported that evaporated copper (Cu) onto spin-on MSQ has high leakage current and provides two alternative models with the aid of energy band diagrams to describe the effect of evaporated Cu onto spin-on MSQ using Metal Oxide Semiconductor capacitor (MOSC) structure.
format Article
author Aw, K.C.
Ibrahim, K.
spellingShingle Aw, K.C.
Ibrahim, K.
Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Aw, K.C.
Ibrahim, K.
author_sort Aw, K.C.
title Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure
title_short Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure
title_full Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure
title_fullStr Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure
title_full_unstemmed Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure
title_sort dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/118103
citation_txt Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure / K.C. Aw, K. Ibrahim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 524-527. — Бібліогр.: 12 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT awkc dualmodeldescribingeffectsofevaporatedmetalgateonlowkdielectricmethylsilsesquioxaneinmetaloxidesemiconductorcapacitorstructure
AT ibrahimk dualmodeldescribingeffectsofevaporatedmetalgateonlowkdielectricmethylsilsesquioxaneinmetaloxidesemiconductorcapacitorstructure
first_indexed 2023-10-18T20:31:21Z
last_indexed 2023-10-18T20:31:21Z
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