2025-02-23T14:40:12-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118103%22&qt=morelikethis&rows=5
2025-02-23T14:40:12-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118103%22&qt=morelikethis&rows=5
2025-02-23T14:40:12-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T14:40:12-05:00 DEBUG: Deserialized SOLR response
Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure
Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore more porous than the traditional silicon...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118103 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
2025-02-23T14:40:12-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118103%22&qt=morelikethis
2025-02-23T14:40:12-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118103%22&qt=morelikethis
2025-02-23T14:40:12-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T14:40:12-05:00 DEBUG: Deserialized SOLR response