Local properties of impurity and defects investigated by high pressure spectroscopy
Using the high-pressure spectroscopy, the pressure shifts of the luminescence related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones, which interact with the nearest neighbor host ions of dielectrics, are investigated. The results are obtained for Ti³⁺, Ce³...
Збережено в:
| Дата: | 2007 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118118 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Local properties of impurity and defects investigated by high pressure spectroscopy / Marek Grinberg // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 28-29. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Using the high-pressure spectroscopy, the pressure shifts of the luminescence
related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones,
which interact with the nearest neighbor host ions of dielectrics, are investigated. The
results are obtained for Ti³⁺, Ce³⁺, Pr³⁺, and Cr³⁺ ions in various lattices. |
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