Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers
To study the influence of microwave irradiation on a spectrum of defect states in porous InP, we have measured the luminescence spectra within the range 0.50 to 2.04 eV at 77 K before and after short and long (up to 600 s) treatments in air in the operation chamber of a magnetron at a frequency o...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2007 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118127 |
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| Цитувати: | Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers / R. Red'ko, S. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 75-76. — Бібліогр.: 5 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118127 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1181272017-05-29T03:03:26Z Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers Red’ko, R. Red’ko, S. To study the influence of microwave irradiation on a spectrum of defect states in porous InP, we have measured the luminescence spectra within the range 0.50 to 2.04 eV at 77 K before and after short and long (up to 600 s) treatments in air in the operation chamber of a magnetron at a frequency of 2.45 GHz and a surface power density of 7.5 W/cm² . We have obtained that the spectra of defects in researched samples are essentially changed as well as the concentrations of local centers. Possible mechanisms of observable changes in the semiconductor impurity-defect composition caused by a microwave treatment are discussed. 2007 Article Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers / R. Red'ko, S. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 75-76. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS 61.71.-y, 71.55.-I http://dspace.nbuv.gov.ua/handle/123456789/118127 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
To study the influence of microwave irradiation on a spectrum of defect states
in porous InP, we have measured the luminescence spectra within the range 0.50 to
2.04 eV at 77 K before and after short and long (up to 600 s) treatments in air in the
operation chamber of a magnetron at a frequency of 2.45 GHz and a surface power
density of 7.5 W/cm²
. We have obtained that the spectra of defects in researched samples
are essentially changed as well as the concentrations of local centers. Possible mechanisms
of observable changes in the semiconductor impurity-defect composition caused
by a microwave treatment are discussed. |
| format |
Article |
| author |
Red’ko, R. Red’ko, S. |
| spellingShingle |
Red’ko, R. Red’ko, S. Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Red’ko, R. Red’ko, S. |
| author_sort |
Red’ko, R. |
| title |
Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers |
| title_short |
Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers |
| title_full |
Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers |
| title_fullStr |
Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers |
| title_full_unstemmed |
Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers |
| title_sort |
effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118127 |
| citation_txt |
Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers / R. Red'ko, S. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 75-76. — Бібліогр.: 5 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT redkor effectofthemicrowaveradiationtreatmentofporousindiumphosphideonspectraofradiativerecombinationcenters AT redkos effectofthemicrowaveradiationtreatmentofporousindiumphosphideonspectraofradiativerecombinationcenters |
| first_indexed |
2023-10-18T20:31:24Z |
| last_indexed |
2023-10-18T20:31:24Z |
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1796150422794141696 |