Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell
The EEPROM process is one the hardest process to be developed. The performance of the EEPROM devices is normally judged on the programming speed, which relates to program high (erase) and program low (write) operations. It is essential that the program high and program low speed of the EEPROM cell i...
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| Дата: | 2004 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118146 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell / U. Hashim, R.M. Ayub, K.S. On // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 112-117. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1181462017-05-29T03:04:53Z Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell Hashim, U. Ayub, R.M. On, K.S. The EEPROM process is one the hardest process to be developed. The performance of the EEPROM devices is normally judged on the programming speed, which relates to program high (erase) and program low (write) operations. It is essential that the program high and program low speed of the EEPROM cell is within 1ms with a programming voltage of not more than 16V. In this study, two experiments were setup to improve the programming speed. The first experiment was to increase the high voltage NMOS drain junction breakdown voltage with the source floating (HVNMOS BVDSF), and the second experiment was to scale down the ONO layer. The characterization work to increase the programming speed of the memory cell of 16k FLOTOX EEPROM has been carried out. P-field implant dose is optimized to have both the HVNMOS BVDSF and the p-field threshold voltage above 16V for fast programming. As a result, the threshold voltages of programming high and low operation are achieved at 4.35V and -0.77V respectively. Furthermore, by scaling down the nitride layer of ONO from 160A to 130A, the Vt program window is further improved to 4.5V and -0.94V for the program high and program low operations respectively. 2004 Article Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell / U. Hashim, R.M. Ayub, K.S. On // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 112-117. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 85.40.-e http://dspace.nbuv.gov.ua/handle/123456789/118146 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The EEPROM process is one the hardest process to be developed. The performance of the EEPROM devices is normally judged on the programming speed, which relates to program high (erase) and program low (write) operations. It is essential that the program high and program low speed of the EEPROM cell is within 1ms with a programming voltage of not more than 16V. In this study, two experiments were setup to improve the programming speed. The first experiment was to increase the high voltage NMOS drain junction breakdown voltage with the source floating (HVNMOS BVDSF), and the second experiment was to scale down the ONO layer. The characterization work to increase the programming speed of the memory cell of 16k FLOTOX EEPROM has been carried out. P-field implant dose is optimized to have both the HVNMOS BVDSF and the p-field threshold voltage above 16V for fast programming. As a result, the threshold voltages of programming high and low operation are achieved at 4.35V and -0.77V respectively. Furthermore, by scaling down the nitride layer of ONO from 160A to 130A, the Vt program window is further improved to 4.5V and -0.94V for the program high and program low operations respectively. |
| format |
Article |
| author |
Hashim, U. Ayub, R.M. On, K.S. |
| spellingShingle |
Hashim, U. Ayub, R.M. On, K.S. Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Hashim, U. Ayub, R.M. On, K.S. |
| author_sort |
Hashim, U. |
| title |
Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell |
| title_short |
Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell |
| title_full |
Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell |
| title_fullStr |
Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell |
| title_full_unstemmed |
Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell |
| title_sort |
fabrication and characterization of ono and tunnel oxide for 16k flotox eeprom cell |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118146 |
| citation_txt |
Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell / U. Hashim, R.M. Ayub, K.S. On // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 112-117. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT hashimu fabricationandcharacterizationofonoandtunneloxidefor16kflotoxeepromcell AT ayubrm fabricationandcharacterizationofonoandtunneloxidefor16kflotoxeepromcell AT onks fabricationandcharacterizationofonoandtunneloxidefor16kflotoxeepromcell |
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2023-10-18T20:31:27Z |
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2023-10-18T20:31:27Z |
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1796150425025511424 |