Sensor based on a non-ideal heterojunction to indicate X-ray images

• Дата: 2004
• Автори: Smyntyna, V.A., Borschak, V.A., Kutalova, M.I., Zatovskaya, N.P., Balaban, A.P.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/118180
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Sensor based on a non-ideal heterojunction to indicate X-ray images / V.A. Smyntyna, V.A. Borschak, M.I. Kutalova, N.P. Zatovskaya, A.P. Balaban // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 222-223. — Бібліогр.: 4 назв. — англ.

The sensor of optical image on the basis of non-ideal heterojunctions are investigated in detail. In this work, the opportunity to obtain the image in X-rays was investigated. It is established that investigated sensor is sensitive to soft X-ray radiation. Memory and accumulation of a signal at a room temperature, which is characteristic of the sensor at registration of images in visible light, take place for the images obtained in X-ray range, too, which makes it possible to apply such sensor in medicine and crystallography.