Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
In this work, we firstly investigated controlling the lattice parameter of IIIoxides used as substrates for III-nitrides heterostructures. It was shown that the atomic content change in III-sublattice gives large possibilities for precise cation controlling the lattice parameters. The developed t...
Збережено в:
| Дата: | 2010 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118211 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures/ V. Osinsky, O. Dyachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 142-144. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | In this work, we firstly investigated controlling the lattice parameter of IIIoxides
used as substrates for III-nitrides heterostructures. It was shown that the atomic
content change in III-sublattice gives large possibilities for precise cation controlling the
lattice parameters. The developed technique is promising to make ideal substrates in IIInitride
epitaxy of LED, LD and transistors with a high quantum efficiency and small
noise. This technology can be realized using MBE, MOSVD or CVD chloride-hydride
epitaxy with computer driving. |
|---|