Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
In this work, we firstly investigated controlling the lattice parameter of IIIoxides used as substrates for III-nitrides heterostructures. It was shown that the atomic content change in III-sublattice gives large possibilities for precise cation controlling the lattice parameters. The developed t...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2010 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118211 |
| Теги: |
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| Цитувати: | Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures/ V. Osinsky, O. Dyachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 142-144. — Бібліогр.: 8 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118211 |
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dspace |
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irk-123456789-1182112017-05-30T03:02:46Z Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures Osinsky, V. Dyachenko, O. In this work, we firstly investigated controlling the lattice parameter of IIIoxides used as substrates for III-nitrides heterostructures. It was shown that the atomic content change in III-sublattice gives large possibilities for precise cation controlling the lattice parameters. The developed technique is promising to make ideal substrates in IIInitride epitaxy of LED, LD and transistors with a high quantum efficiency and small noise. This technology can be realized using MBE, MOSVD or CVD chloride-hydride epitaxy with computer driving. 2010 Article Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures/ V. Osinsky, O. Dyachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 142-144. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 81.15.-z, 85.40.-e, 85.60.Jb http://dspace.nbuv.gov.ua/handle/123456789/118211 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In this work, we firstly investigated controlling the lattice parameter of IIIoxides
used as substrates for III-nitrides heterostructures. It was shown that the atomic
content change in III-sublattice gives large possibilities for precise cation controlling the
lattice parameters. The developed technique is promising to make ideal substrates in IIInitride
epitaxy of LED, LD and transistors with a high quantum efficiency and small
noise. This technology can be realized using MBE, MOSVD or CVD chloride-hydride
epitaxy with computer driving. |
| format |
Article |
| author |
Osinsky, V. Dyachenko, O. |
| spellingShingle |
Osinsky, V. Dyachenko, O. Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Osinsky, V. Dyachenko, O. |
| author_sort |
Osinsky, V. |
| title |
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| title_short |
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| title_full |
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| title_fullStr |
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| title_full_unstemmed |
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures |
| title_sort |
crystal lattice engineering the novel substrates for iii-nitride-oxide heterostructures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2010 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118211 |
| citation_txt |
Crystal lattice engineering the novel substrates
for III-nitride-oxide heterostructures/ V. Osinsky, O. Dyachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 142-144. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT osinskyv crystallatticeengineeringthenovelsubstratesforiiinitrideoxideheterostructures AT dyachenkoo crystallatticeengineeringthenovelsubstratesforiiinitrideoxideheterostructures |
| first_indexed |
2023-10-18T20:31:37Z |
| last_indexed |
2023-10-18T20:31:37Z |
| _version_ |
1796150429166338048 |