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Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure

Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure

Effect of post-growth thermal annealing within the temperature range 200 to 430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD) heterostructure was studied. Annealing at lower temperatures (Tann <= 270 ºС) results in an increase by a factor of 2-3 of the inten...

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Main Authors: Borkovska, L.V., Stara, T.R., Korsunska, N.O., Pechers’ka, К.Yu., Germash, L.P., Bondarenko, V.O.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118218
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spelling irk-123456789-1182182017-05-30T03:05:31Z Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure Borkovska, L.V. Stara, T.R. Korsunska, N.O. Pechers’ka, К.Yu. Germash, L.P. Bondarenko, V.O. Effect of post-growth thermal annealing within the temperature range 200 to 430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD) heterostructure was studied. Annealing at lower temperatures (Tann <= 270 ºС) results in an increase by a factor of 2-3 of the intensity of two photoluminescence bands observed, the first being caused by excitonic transitions in QDs and the second one being connected with the defect complex including a column II vacancy. The effect is supposed to be caused by annealing of as-grown nonradiative defects. Annealing at higher temperatures (Tann > 270 ºС) stimulates a decrease of the QD photoluminescence band intensity and up to 100 meV blue shift of its peak position. The former is explained by generation of extended defects and reduction of the QD density. The blue shift observed at 370-430 ºС is ascribed to diffusion of cadmium from QDs that also results in reduction of the QD density. It is found that the energy of excitonic transitions in the wetting layer does not change upon annealing. Lower thermal stability of QDs as compared to that of the wetting layer has been explained by strain-enhanced lateral Cd/Zn interdiffusion via vacancies. The presence of column II vacancies in the wetting layer is proved by characteristics of defect-related PL band and its excitation spectra. 2010 Article Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure/ L.V. Borkovska, T.R. Stara, N.O. Korsunska, К.Yu. Pechers'ka, L.P. Germash, V.O.Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 202-208. — Бібліогр.: 37 назв. — англ. 1560-8034 PACS 66.30.Pa, 78.55.Et, 78.67.Hc http://dspace.nbuv.gov.ua/handle/123456789/118218 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Effect of post-growth thermal annealing within the temperature range 200 to 430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD) heterostructure was studied. Annealing at lower temperatures (Tann <= 270 ºС) results in an increase by a factor of 2-3 of the intensity of two photoluminescence bands observed, the first being caused by excitonic transitions in QDs and the second one being connected with the defect complex including a column II vacancy. The effect is supposed to be caused by annealing of as-grown nonradiative defects. Annealing at higher temperatures (Tann > 270 ºС) stimulates a decrease of the QD photoluminescence band intensity and up to 100 meV blue shift of its peak position. The former is explained by generation of extended defects and reduction of the QD density. The blue shift observed at 370-430 ºС is ascribed to diffusion of cadmium from QDs that also results in reduction of the QD density. It is found that the energy of excitonic transitions in the wetting layer does not change upon annealing. Lower thermal stability of QDs as compared to that of the wetting layer has been explained by strain-enhanced lateral Cd/Zn interdiffusion via vacancies. The presence of column II vacancies in the wetting layer is proved by characteristics of defect-related PL band and its excitation spectra.
format Article
author Borkovska, L.V.
Stara, T.R.
Korsunska, N.O.
Pechers’ka, К.Yu.
Germash, L.P.
Bondarenko, V.O.
spellingShingle Borkovska, L.V.
Stara, T.R.
Korsunska, N.O.
Pechers’ka, К.Yu.
Germash, L.P.
Bondarenko, V.O.
Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Borkovska, L.V.
Stara, T.R.
Korsunska, N.O.
Pechers’ka, К.Yu.
Germash, L.P.
Bondarenko, V.O.
author_sort Borkovska, L.V.
title Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure
title_short Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure
title_full Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure
title_fullStr Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure
title_full_unstemmed Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure
title_sort effect of thermal annealing on the luminescent characteristics of cdse/znse quantum dot heterostructure
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2010
url http://dspace.nbuv.gov.ua/handle/123456789/118218
citation_txt Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure/ L.V. Borkovska, T.R. Stara, N.O. Korsunska, К.Yu. Pechers'ka, L.P. Germash, V.O.Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 202-208. — Бібліогр.: 37 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:31:49Z
last_indexed 2023-10-18T20:31:49Z
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