Zero bias terahertz and subterahertz detector operating at room temperature
In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound Hg₁₋xCdxTe is presented. The measurements were performed in the temperature range from 77 to 300 K at various operating mode and frequency. The estimated value...
Збережено в:
| Дата: | 2010 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118225 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Zero bias terahertz and subterahertz detector operating/ N. Momot, V. Zabudsky, Z. Tsybrii, M. Apats'ka, M. Smoliy, N. Dmytruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 166-169. — Бібліогр.: 11 назв. — англ. at room temperature |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | In this paper, the experimental study of the terahertz and subterahertz hot
electron bolometer based on narrow-gap semiconductor compound Hg₁₋xCdxTe is
presented. The measurements were performed in the temperature range from 77 to
300 K at various operating mode and frequency. The estimated value of the noise
equivalent power at room temperature for detector proposed was 1.3·10⁻⁸ W/Hz¹/² and
5.4·10⁻⁹ W/Hz¹/² at bias current I = 1 mA and I = 0, respectively. |
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