Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S

The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S heterostructure both at direct and alternative current strongly depends on barrier parameters that can change under exposure. It was stated that such parameter as resistance of space charge region considerably depends on its...

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Бібліографічні деталі
Дата:2012
Автори: Borschak, V.A., Brytavskyi, Ie.V., Smyntyna, V.A., Lepikh, Ya.I., Balaban, A.P., Zatovskaya, N.P.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118251
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S / V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P. Balaban, N.P. Zatovskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 41-43. — Бібліогр.: 5 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118251
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spelling irk-123456789-1182512017-05-30T03:03:42Z Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S Borschak, V.A. Brytavskyi, Ie.V. Smyntyna, V.A. Lepikh, Ya.I. Balaban, A.P. Zatovskaya, N.P. The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S heterostructure both at direct and alternative current strongly depends on barrier parameters that can change under exposure. It was stated that such parameter as resistance of space charge region considerably depends on its width at a constant barrier height, and this dependence is similar to linear shape. This behavior can indicate domination of tunnel multistep mechanisms in the studied structure, for instance, the mechanism of tunnel-jumping conductivity. 2012 Article Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S / V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P. Balaban, N.P. Zatovskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 41-43. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS 73.40.Gk, Lq; 73.61.Ga http://dspace.nbuv.gov.ua/handle/123456789/118251 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S heterostructure both at direct and alternative current strongly depends on barrier parameters that can change under exposure. It was stated that such parameter as resistance of space charge region considerably depends on its width at a constant barrier height, and this dependence is similar to linear shape. This behavior can indicate domination of tunnel multistep mechanisms in the studied structure, for instance, the mechanism of tunnel-jumping conductivity.
format Article
author Borschak, V.A.
Brytavskyi, Ie.V.
Smyntyna, V.A.
Lepikh, Ya.I.
Balaban, A.P.
Zatovskaya, N.P.
spellingShingle Borschak, V.A.
Brytavskyi, Ie.V.
Smyntyna, V.A.
Lepikh, Ya.I.
Balaban, A.P.
Zatovskaya, N.P.
Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Borschak, V.A.
Brytavskyi, Ie.V.
Smyntyna, V.A.
Lepikh, Ya.I.
Balaban, A.P.
Zatovskaya, N.P.
author_sort Borschak, V.A.
title Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S
title_short Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S
title_full Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S
title_fullStr Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S
title_full_unstemmed Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S
title_sort influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure cds-cu₂s
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2012
url http://dspace.nbuv.gov.ua/handle/123456789/118251
citation_txt Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S / V.A. Borschak, Ie.V. Brytavskyi, V.A. Smyntyna, Ya.I. Lepikh, A.P. Balaban, N.P. Zatovskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 41-43. — Бібліогр.: 5 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT lepikhyai influenceofinternalparametersonthesignalvalueinopticalsensorbasedonthenonidealheterostructurecdscu2s
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first_indexed 2023-10-18T20:31:41Z
last_indexed 2023-10-18T20:31:41Z
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