Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics
Discussed in this paper are options for replacing the virtual structure of SiC atoms with AlN compound. The Al₄C₃, AlNC and AlNOC compounds in vapor and solid epitaxial processes have been obtained as a result of carbothermic reduction. Analized is the role of precursors in the way of reducing th...
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| Дата: | 2012 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118271 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics / V.I. Osinsky, I.V. Masol, N.N. Lyahova, P.V. Deminsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 55-60. — Бібліогр.: 5 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118271 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1182712017-05-30T03:03:58Z Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics Osinsky, V.I. Masol, I.V. Lyahova, N.N. Deminsky, P.V. Discussed in this paper are options for replacing the virtual structure of SiC atoms with AlN compound. The Al₄C₃, AlNC and AlNOC compounds in vapor and solid epitaxial processes have been obtained as a result of carbothermic reduction. Analized is the role of precursors in the way of reducing the formation temperature for stable phases of aluminum oxynitrocarbide during epitaxy of aluminum nitride in the presence of carbon atoms. The dependence on preparation conditions for the aluminum single oxycarbide crystal structure has been explored. The influence of partial 2H-SiC crystal structure on the state of the single oxycarbide crystal structure was determined. The semiconductor AlNOC has been experimentally obtained. 2012 Article Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics / V.I. Osinsky, I.V. Masol, N.N. Lyahova, P.V. Deminsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 55-60. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS 77.84.Bw http://dspace.nbuv.gov.ua/handle/123456789/118271 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Discussed in this paper are options for replacing the virtual structure of SiC
atoms with AlN compound. The Al₄C₃, AlNC and AlNOC compounds in vapor and solid
epitaxial processes have been obtained as a result of carbothermic reduction. Analized is
the role of precursors in the way of reducing the formation temperature for stable phases
of aluminum oxynitrocarbide during epitaxy of aluminum nitride in the presence of
carbon atoms. The dependence on preparation conditions for the aluminum single
oxycarbide crystal structure has been explored. The influence of partial 2H-SiC crystal
structure on the state of the single oxycarbide crystal structure was determined. The
semiconductor AlNOC has been experimentally obtained. |
| format |
Article |
| author |
Osinsky, V.I. Masol, I.V. Lyahova, N.N. Deminsky, P.V. |
| spellingShingle |
Osinsky, V.I. Masol, I.V. Lyahova, N.N. Deminsky, P.V. Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Osinsky, V.I. Masol, I.V. Lyahova, N.N. Deminsky, P.V. |
| author_sort |
Osinsky, V.I. |
| title |
Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics |
| title_short |
Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics |
| title_full |
Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics |
| title_fullStr |
Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics |
| title_full_unstemmed |
Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics |
| title_sort |
carbides of a³b⁵ compounds – new class materials for opto- and microelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118271 |
| citation_txt |
Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics / V.I. Osinsky, I.V. Masol, N.N. Lyahova, P.V. Deminsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 55-60. — Бібліогр.: 5 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT osinskyvi carbidesofa3b5compoundsnewclassmaterialsforoptoandmicroelectronics AT masoliv carbidesofa3b5compoundsnewclassmaterialsforoptoandmicroelectronics AT lyahovann carbidesofa3b5compoundsnewclassmaterialsforoptoandmicroelectronics AT deminskypv carbidesofa3b5compoundsnewclassmaterialsforoptoandmicroelectronics |
| first_indexed |
2023-10-18T20:31:42Z |
| last_indexed |
2023-10-18T20:31:42Z |
| _version_ |
1796150433626980352 |