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Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K

Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K

The change in mobility with increasing the temperature which may be due to the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions are not completely removed from...

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Main Authors: Ermakov, V.M., Kolomoets, V.V., Panasyuk, L.I., Nazarchuk, P.F., Yashchynskiy, L.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118279
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spelling irk-123456789-1182792017-05-30T03:03:49Z Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K Ermakov, V.M. Kolomoets, V.V. Panasyuk, L.I. Nazarchuk, P.F. Yashchynskiy, L.V. The change in mobility with increasing the temperature which may be due to the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions are not completely removed from valleys located in the plane (100). In this case, there is no change in the slope of the dependence logρ vs. logT for the temperature range 300 to 450 K. So, no contribution of g-transitions to intervalley scattering occurs, while the observed is tha decisive role of f–transitions to this scattering. 2012 Article Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K / V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 77-79. — Бібліогр.: 3 назв. — англ. 1560-8034 PACS 72.20.Dp http://dspace.nbuv.gov.ua/handle/123456789/118279 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The change in mobility with increasing the temperature which may be due to the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions are not completely removed from valleys located in the plane (100). In this case, there is no change in the slope of the dependence logρ vs. logT for the temperature range 300 to 450 K. So, no contribution of g-transitions to intervalley scattering occurs, while the observed is tha decisive role of f–transitions to this scattering.
format Article
author Ermakov, V.M.
Kolomoets, V.V.
Panasyuk, L.I.
Nazarchuk, P.F.
Yashchynskiy, L.V.
spellingShingle Ermakov, V.M.
Kolomoets, V.V.
Panasyuk, L.I.
Nazarchuk, P.F.
Yashchynskiy, L.V.
Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Ermakov, V.M.
Kolomoets, V.V.
Panasyuk, L.I.
Nazarchuk, P.F.
Yashchynskiy, L.V.
author_sort Ermakov, V.M.
title Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K
title_short Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K
title_full Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K
title_fullStr Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K
title_full_unstemmed Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K
title_sort contribution of f- and g- transitions to electron intervalley scattering of n-s at temperatures 300 to 450 k
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2012
url http://dspace.nbuv.gov.ua/handle/123456789/118279
citation_txt Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K / V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 77-79. — Бібліогр.: 3 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT ermakovvm contributionoffandgtransitionstoelectronintervalleyscatteringofnsattemperatures300to450k
AT kolomoetsvv contributionoffandgtransitionstoelectronintervalleyscatteringofnsattemperatures300to450k
AT panasyukli contributionoffandgtransitionstoelectronintervalleyscatteringofnsattemperatures300to450k
AT nazarchukpf contributionoffandgtransitionstoelectronintervalleyscatteringofnsattemperatures300to450k
AT yashchynskiylv contributionoffandgtransitionstoelectronintervalleyscatteringofnsattemperatures300to450k
first_indexed 2023-10-18T20:31:43Z
last_indexed 2023-10-18T20:31:43Z
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