Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K
The change in mobility with increasing the temperature which may be due to the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions are not completely removed from...
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| Дата: | 2012 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118279 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K / V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 77-79. — Бібліогр.: 3 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118279 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1182792017-05-30T03:03:49Z Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K Ermakov, V.M. Kolomoets, V.V. Panasyuk, L.I. Nazarchuk, P.F. Yashchynskiy, L.V. The change in mobility with increasing the temperature which may be due to the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions are not completely removed from valleys located in the plane (100). In this case, there is no change in the slope of the dependence logρ vs. logT for the temperature range 300 to 450 K. So, no contribution of g-transitions to intervalley scattering occurs, while the observed is tha decisive role of f–transitions to this scattering. 2012 Article Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K / V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 77-79. — Бібліогр.: 3 назв. — англ. 1560-8034 PACS 72.20.Dp http://dspace.nbuv.gov.ua/handle/123456789/118279 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The change in mobility with increasing the temperature which may be due to
the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial
pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions
are not completely removed from valleys located in the plane (100). In this
case, there is no change in the slope of the dependence logρ vs. logT for the
temperature range 300 to 450 K. So, no contribution of g-transitions to intervalley
scattering occurs, while the observed is tha decisive role of f–transitions to this
scattering. |
| format |
Article |
| author |
Ermakov, V.M. Kolomoets, V.V. Panasyuk, L.I. Nazarchuk, P.F. Yashchynskiy, L.V. |
| spellingShingle |
Ermakov, V.M. Kolomoets, V.V. Panasyuk, L.I. Nazarchuk, P.F. Yashchynskiy, L.V. Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Ermakov, V.M. Kolomoets, V.V. Panasyuk, L.I. Nazarchuk, P.F. Yashchynskiy, L.V. |
| author_sort |
Ermakov, V.M. |
| title |
Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K |
| title_short |
Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K |
| title_full |
Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K |
| title_fullStr |
Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K |
| title_full_unstemmed |
Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K |
| title_sort |
contribution of f- and g- transitions to electron intervalley scattering of n-s at temperatures 300 to 450 k |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118279 |
| citation_txt |
Contribution of f- and g- transitions to electron intervalley scattering
of n-S at temperatures 300 to 450 K / V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 77-79. — Бібліогр.: 3 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT ermakovvm contributionoffandgtransitionstoelectronintervalleyscatteringofnsattemperatures300to450k AT kolomoetsvv contributionoffandgtransitionstoelectronintervalleyscatteringofnsattemperatures300to450k AT panasyukli contributionoffandgtransitionstoelectronintervalleyscatteringofnsattemperatures300to450k AT nazarchukpf contributionoffandgtransitionstoelectronintervalleyscatteringofnsattemperatures300to450k AT yashchynskiylv contributionoffandgtransitionstoelectronintervalleyscatteringofnsattemperatures300to450k |
| first_indexed |
2023-10-18T20:31:43Z |
| last_indexed |
2023-10-18T20:31:43Z |
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