Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum
Conductivity of monolayer and bilayer graphene is considered with due regard for mutual drag of band electrons and holes. Search of contribution of the drag to conductivity shows that it sufficiently influences on mobility at high concentrations of carriers, which belong to different groups and h...
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| Дата: | 2012 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118302 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 129-138. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118302 |
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dspace |
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irk-123456789-1183022017-05-30T03:03:41Z Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum Boiko, I.I. Conductivity of monolayer and bilayer graphene is considered with due regard for mutual drag of band electrons and holes. Search of contribution of the drag to conductivity shows that it sufficiently influences on mobility at high concentrations of carriers, which belong to different groups and have different drift velocities. In bilayer system the mutual drag can even change the direction of partial current. Magnetoresistivity and Hall effect were theoretically investigated for neutral and gated graphene. It is shown that for spatially unlimited neutral graphene Hall effect is totally absent. In gated, exactly monopolar graphene for the same case effect of magnetoresistivity vanishes; here the Hall constant does not involve any relaxation characteristic in contrast to results obtained for the popular method of τ-approximation. It is shown that limited sizes of crystal with monopolar conductivity can be cause for impressive dependence of the Hall constant and magnetoresistivity on the value of external magnetic field. 2012 Article Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 129-138. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 72.10.-d, 72.20-i http://dspace.nbuv.gov.ua/handle/123456789/118302 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Conductivity of monolayer and bilayer graphene is considered with due regard
for mutual drag of band electrons and holes. Search of contribution of the drag to
conductivity shows that it sufficiently influences on mobility at high concentrations of
carriers, which belong to different groups and have different drift velocities. In bilayer
system the mutual drag can even change the direction of partial current.
Magnetoresistivity and Hall effect were theoretically investigated for neutral and gated
graphene. It is shown that for spatially unlimited neutral graphene Hall effect is totally
absent. In gated, exactly monopolar graphene for the same case effect of
magnetoresistivity vanishes; here the Hall constant does not involve any relaxation
characteristic in contrast to results obtained for the popular method of τ-approximation. It
is shown that limited sizes of crystal with monopolar conductivity can be cause for
impressive dependence of the Hall constant and magnetoresistivity on the value of
external magnetic field. |
| format |
Article |
| author |
Boiko, I.I. |
| spellingShingle |
Boiko, I.I. Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Boiko, I.I. |
| author_sort |
Boiko, I.I. |
| title |
Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum |
| title_short |
Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum |
| title_full |
Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum |
| title_fullStr |
Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum |
| title_full_unstemmed |
Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum |
| title_sort |
transport phenomena of two-dimensional band carriers with dirac-like energetic spectrum |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118302 |
| citation_txt |
Transport phenomena of two-dimensional band carriers
with Dirac-like energetic spectrum / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 129-138. — Бібліогр.: 12 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT boikoii transportphenomenaoftwodimensionalbandcarrierswithdiraclikeenergeticspectrum |
| first_indexed |
2023-10-18T20:31:44Z |
| last_indexed |
2023-10-18T20:31:44Z |
| _version_ |
1796150439672020992 |