Application of ferroelectrics to create electroluminescent indicators of temperature
In this article, temperature dependences of brightness of thin film electroluminescent emitters (TFELE) based on metal-dielectric-semiconductor-metal (MDSM) structures with ceramic ferroelectric dielectric have been considered. Their comparable analysis with the temperature dependence of dielectr...
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| Дата: | 2012 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118303 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Application of ferroelectrics to create electroluminescent indicators of temperature / V.G. Boyko, N.S. Zayats // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 162-165. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118303 |
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dspace |
| spelling |
irk-123456789-1183032017-05-30T03:03:42Z Application of ferroelectrics to create electroluminescent indicators of temperature Boyko, V.G. Zayats, N.S. In this article, temperature dependences of brightness of thin film electroluminescent emitters (TFELE) based on metal-dielectric-semiconductor-metal (MDSM) structures with ceramic ferroelectric dielectric have been considered. Their comparable analysis with the temperature dependence of dielectric themself has been made. Literature data concerning this question have been briefly discussed. The conclusion about the possibility to use ferroelectrics (ceramics based on BaTiO₃, AlN, LiNbO₃) with a pronounced thermal dependence of capacitance characteristics to produce the temperature light indicators has been made. The design of a new temperature sensor can be realized in several ways. For example, in the form of the scales with a moving luminous column or separate lighting dots, depending on how clearly Curie peaks are observed on the temperature curves of dielectric permittivity. 2012 Article Application of ferroelectrics to create electroluminescent indicators of temperature / V.G. Boyko, N.S. Zayats // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 162-165. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 77.55.fe, hd; 77.80.B-, 78.60.Fi http://dspace.nbuv.gov.ua/handle/123456789/118303 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In this article, temperature dependences of brightness of thin film
electroluminescent emitters (TFELE) based on metal-dielectric-semiconductor-metal
(MDSM) structures with ceramic ferroelectric dielectric have been considered. Their
comparable analysis with the temperature dependence of dielectric themself has been
made. Literature data concerning this question have been briefly discussed. The
conclusion about the possibility to use ferroelectrics (ceramics based on BaTiO₃, AlN,
LiNbO₃) with a pronounced thermal dependence of capacitance characteristics to
produce the temperature light indicators has been made. The design of a new temperature
sensor can be realized in several ways. For example, in the form of the scales with a
moving luminous column or separate lighting dots, depending on how clearly Curie
peaks are observed on the temperature curves of dielectric permittivity. |
| format |
Article |
| author |
Boyko, V.G. Zayats, N.S. |
| spellingShingle |
Boyko, V.G. Zayats, N.S. Application of ferroelectrics to create electroluminescent indicators of temperature Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Boyko, V.G. Zayats, N.S. |
| author_sort |
Boyko, V.G. |
| title |
Application of ferroelectrics to create electroluminescent indicators of temperature |
| title_short |
Application of ferroelectrics to create electroluminescent indicators of temperature |
| title_full |
Application of ferroelectrics to create electroluminescent indicators of temperature |
| title_fullStr |
Application of ferroelectrics to create electroluminescent indicators of temperature |
| title_full_unstemmed |
Application of ferroelectrics to create electroluminescent indicators of temperature |
| title_sort |
application of ferroelectrics to create electroluminescent indicators of temperature |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118303 |
| citation_txt |
Application of ferroelectrics to create electroluminescent
indicators of temperature / V.G. Boyko, N.S. Zayats // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 162-165. — Бібліогр.: 10 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT boykovg applicationofferroelectricstocreateelectroluminescentindicatorsoftemperature AT zayatsns applicationofferroelectricstocreateelectroluminescentindicatorsoftemperature |
| first_indexed |
2023-10-18T20:31:45Z |
| last_indexed |
2023-10-18T20:31:45Z |
| _version_ |
1796150439776878592 |