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Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures
We investigated the effect of hydrostatic pressure on relaxation characteristics of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min exposure to a pressure of 8 kbars results in reduction of the integral density of surface states, while exerting no influence on the gen...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118305 |
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| Summary: | We investigated the effect of hydrostatic pressure on relaxation characteristics
of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min
exposure to a pressure of 8 kbars results in reduction of the integral density of surface
states, while exerting no influence on the generation centers in the bulk. |
|---|