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Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures
We investigated the effect of hydrostatic pressure on relaxation characteristics of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min exposure to a pressure of 8 kbars results in reduction of the integral density of surface states, while exerting no influence on the gen...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118305 |
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irk-123456789-1183052017-05-30T03:03:59Z Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures Vlasov, S.I. Ovsyannikov, A.V. Ismailov, B.K. Kuchkarov, B.H. We investigated the effect of hydrostatic pressure on relaxation characteristics of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min exposure to a pressure of 8 kbars results in reduction of the integral density of surface states, while exerting no influence on the generation centers in the bulk. 2012 Article Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures / S.I. Vlasov, A.V. Ovsyannikov, B.K. Ismailov, B.H. Kuchkarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 166-169. — Бібліогр.: 15Х назв. — англ. 1560-8034 PACS 73.40.Rw http://dspace.nbuv.gov.ua/handle/123456789/118305 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| language |
English |
| description |
We investigated the effect of hydrostatic pressure on relaxation characteristics
of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min
exposure to a pressure of 8 kbars results in reduction of the integral density of surface
states, while exerting no influence on the generation centers in the bulk. |
| format |
Article |
| author |
Vlasov, S.I. Ovsyannikov, A.V. Ismailov, B.K. Kuchkarov, B.H. |
| spellingShingle |
Vlasov, S.I. Ovsyannikov, A.V. Ismailov, B.K. Kuchkarov, B.H. Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vlasov, S.I. Ovsyannikov, A.V. Ismailov, B.K. Kuchkarov, B.H. |
| author_sort |
Vlasov, S.I. |
| title |
Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures |
| title_short |
Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures |
| title_full |
Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures |
| title_fullStr |
Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures |
| title_full_unstemmed |
Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures |
| title_sort |
effect of pressure on the properties of al-sio₂-n-si<ni> structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118305 |
| citation_txt |
Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures / S.I. Vlasov, A.V. Ovsyannikov, B.K. Ismailov, B.H. Kuchkarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 166-169. — Бібліогр.: 15Х назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT vlasovsi effectofpressureonthepropertiesofalsio2nsinistructures AT ovsyannikovav effectofpressureonthepropertiesofalsio2nsinistructures AT ismailovbk effectofpressureonthepropertiesofalsio2nsinistructures AT kuchkarovbh effectofpressureonthepropertiesofalsio2nsinistructures |
| first_indexed |
2023-10-18T20:31:45Z |
| last_indexed |
2023-10-18T20:31:45Z |
| _version_ |
1796150439988690944 |