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Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures

Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures

We investigated the effect of hydrostatic pressure on relaxation characteristics of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min exposure to a pressure of 8 kbars results in reduction of the integral density of surface states, while exerting no influence on the gen...

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Bibliographic Details
Main Authors: Vlasov, S.I., Ovsyannikov, A.V., Ismailov, B.K., Kuchkarov, B.H.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118305
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http://dspace.nbuv.gov.ua/handle/123456789/118305

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