Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction
Narrow-gap mercury cadmium telluride thin films grown by MBE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs) were investigated as a piezoelectric heterostructure for IR detection. Mechanical stresses at the layer-substrate interface were analyzed. It was determined that for [310] oriente...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2012 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118306 |
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| Цитувати: | Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction/ A. B. Smirnov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 170-175. — Бібліогр.: 22 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118306 |
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dspace |
| spelling |
irk-123456789-1183062017-05-30T03:03:27Z Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction Smirnov, A. B. Narrow-gap mercury cadmium telluride thin films grown by MBE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs) were investigated as a piezoelectric heterostructure for IR detection. Mechanical stresses at the layer-substrate interface were analyzed. It was determined that for [310] oriented MCT-based structures under the anisotropic restriction of the deformation the nonzero shear components of the strain tensor arise and stress induced piezoelectric polarization is generated. Existence of the built-in electric field in the strained MCT-based heterostructure results in the spatial separation of the nonequilibrium carriers and the possibility of the room temperature detection of the IR radiation is realized. 2012 Article Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction/ A. B. Smirnov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 170-175. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 72.40.+w, 77.65.Ly, 81.05.Dz http://dspace.nbuv.gov.ua/handle/123456789/118306 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Narrow-gap mercury cadmium telluride thin films grown by MBE methods
onto various substrates (HgCdTe/Si, HgCdTe/GaAs) were investigated as a piezoelectric
heterostructure for IR detection. Mechanical stresses at the layer-substrate interface were
analyzed. It was determined that for [310] oriented MCT-based structures under the
anisotropic restriction of the deformation the nonzero shear components of the strain
tensor arise and stress induced piezoelectric polarization is generated. Existence of the
built-in electric field in the strained MCT-based heterostructure results in the spatial
separation of the nonequilibrium carriers and the possibility of the room temperature
detection of the IR radiation is realized. |
| format |
Article |
| author |
Smirnov, A. B. |
| spellingShingle |
Smirnov, A. B. Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Smirnov, A. B. |
| author_sort |
Smirnov, A. B. |
| title |
Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction |
| title_short |
Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction |
| title_full |
Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction |
| title_fullStr |
Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction |
| title_full_unstemmed |
Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction |
| title_sort |
residual stresses and piezoelectric properties of the hgcdte – based compound heterostructures under the anisotropic deformation restriction |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118306 |
| citation_txt |
Residual stresses and piezoelectric properties of the HgCdTe –
based compound heterostructures under the anisotropic
deformation restriction/ A. B. Smirnov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 170-175. — Бібліогр.: 22 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT smirnovab residualstressesandpiezoelectricpropertiesofthehgcdtebasedcompoundheterostructuresundertheanisotropicdeformationrestriction |
| first_indexed |
2023-10-18T20:31:45Z |
| last_indexed |
2023-10-18T20:31:45Z |
| _version_ |
1796150440093548544 |