Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals

Electrical conductivity of Cu₇(Ge₁₋xSix)S₅I mixed crystals was measured in the frequency range 1.0x10⁶ –1.2x10⁹ Hz and in the temperature interval 100–300 K. The frequency and temperature behaviour of the electrical conductivity were analyzed. The optical absorption edge of Cu₇(Ge₁₋xSix)S₅I mixed cr...

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Дата:2012
Автори: Studenyak, I.P., Kranjčec, M., Bilanchuk, V.V., Dziaugys, A., Banys, J., Orliukas, A.F.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118317
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals / I.P. Studenyak, M. Kranjcec, V.V. Bilanchuk, A. Dziaugys, J. Banys, A.F. Orliukas // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 227-231. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1183172017-05-30T03:05:47Z Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals Studenyak, I.P. Kranjčec, M. Bilanchuk, V.V. Dziaugys, A. Banys, J. Orliukas, A.F. Electrical conductivity of Cu₇(Ge₁₋xSix)S₅I mixed crystals was measured in the frequency range 1.0x10⁶ –1.2x10⁹ Hz and in the temperature interval 100–300 K. The frequency and temperature behaviour of the electrical conductivity were analyzed. The optical absorption edge of Cu₇(Ge₁₋xSix)S₅I mixed crystals within the temperature range 77–300 K was studied. The compositional dependences of the electrical conductivity, activation energy, optical pseudogap and Urbach energy were obtained. The influence of Ge→Si cation substitution on the optical absorption processes in the Cu₇(Ge₁₋xSix)S₅I mixed crystals is investigated. 2012 Article Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals / I.P. Studenyak, M. Kranjcec, V.V. Bilanchuk, A. Dziaugys, J. Banys, A.F. Orliukas // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 227-231. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 77.80.Bh, 78.40.Ha http://dspace.nbuv.gov.ua/handle/123456789/118317 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Electrical conductivity of Cu₇(Ge₁₋xSix)S₅I mixed crystals was measured in the frequency range 1.0x10⁶ –1.2x10⁹ Hz and in the temperature interval 100–300 K. The frequency and temperature behaviour of the electrical conductivity were analyzed. The optical absorption edge of Cu₇(Ge₁₋xSix)S₅I mixed crystals within the temperature range 77–300 K was studied. The compositional dependences of the electrical conductivity, activation energy, optical pseudogap and Urbach energy were obtained. The influence of Ge→Si cation substitution on the optical absorption processes in the Cu₇(Ge₁₋xSix)S₅I mixed crystals is investigated.
format Article
author Studenyak, I.P.
Kranjčec, M.
Bilanchuk, V.V.
Dziaugys, A.
Banys, J.
Orliukas, A.F.
spellingShingle Studenyak, I.P.
Kranjčec, M.
Bilanchuk, V.V.
Dziaugys, A.
Banys, J.
Orliukas, A.F.
Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Studenyak, I.P.
Kranjčec, M.
Bilanchuk, V.V.
Dziaugys, A.
Banys, J.
Orliukas, A.F.
author_sort Studenyak, I.P.
title Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals
title_short Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals
title_full Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals
title_fullStr Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals
title_full_unstemmed Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals
title_sort influence of cation substitution on electrical conductivity and optical absorption edge in cu₇(ge1–xsix)s₅i mixed crystals
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2012
url http://dspace.nbuv.gov.ua/handle/123456789/118317
citation_txt Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals / I.P. Studenyak, M. Kranjcec, V.V. Bilanchuk, A. Dziaugys, J. Banys, A.F. Orliukas // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 227-231. — Бібліогр.: 17 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:31:54Z
last_indexed 2023-10-18T20:31:54Z
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