The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis
Considered in this paper is the model that combines appearance of defects responsible for self-activated (SA) emission in ZnS with its piezoelectric properties. Being based on analysis of the luminescence spectrum, the authors demonstrate the influence of mechanical destruction, impact of ultraso...
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| Дата: | 2012 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118319 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis / Yu.Yu. Bacherikov, A.G. Zhuk, S.V. Optasyuk, O.B. Okhrimenko, K.D. Kardashov, S.V. Kozitskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 239-246. — Бібліогр.: 39 назв. — англ. |
Репозитарії
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irk-123456789-1183192017-05-30T03:06:03Z The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis Bacherikov, Yu.Yu. Zhuk, A.G. Optasyuk, S.V. Okhrimenko, O.B. Kardashov, K.D. Kozitskiy, S.V. Considered in this paper is the model that combines appearance of defects responsible for self-activated (SA) emission in ZnS with its piezoelectric properties. Being based on analysis of the luminescence spectrum, the authors demonstrate the influence of mechanical destruction, impact of ultrasound, microwave radiation and pulsed magnetic field on the emission efficiency for centers of luminescence connected with intrinsic defects in ZnS:Mn prepared using the method of self-propagating hightemperature synthesis (SHS). It has been shown that downsizing the ZnS:Mn crystals prepared according to the above method as well as more discrete differentiation of phases present in this material due to development and growth of inner boundaries and surface under external actions leads to quenched SA-photoluminescence with λ ~ 400–525 nm 2012 Article The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis / Yu.Yu. Bacherikov, A.G. Zhuk, S.V. Optasyuk, O.B. Okhrimenko, K.D. Kardashov, S.V. Kozitskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 239-246. — Бібліогр.: 39 назв. — англ. 1560-8034 PACS 61.72.Cc, 66.30.Lw, 78.55.Et http://dspace.nbuv.gov.ua/handle/123456789/118319 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Considered in this paper is the model that combines appearance of defects
responsible for self-activated (SA) emission in ZnS with its piezoelectric properties.
Being based on analysis of the luminescence spectrum, the authors demonstrate the
influence of mechanical destruction, impact of ultrasound, microwave radiation and
pulsed magnetic field on the emission efficiency for centers of luminescence connected
with intrinsic defects in ZnS:Mn prepared using the method of self-propagating hightemperature
synthesis (SHS). It has been shown that downsizing the ZnS:Mn crystals
prepared according to the above method as well as more discrete differentiation of phases
present in this material due to development and growth of inner boundaries and surface
under external actions leads to quenched SA-photoluminescence with λ ~ 400–525 nm |
| format |
Article |
| author |
Bacherikov, Yu.Yu. Zhuk, A.G. Optasyuk, S.V. Okhrimenko, O.B. Kardashov, K.D. Kozitskiy, S.V. |
| spellingShingle |
Bacherikov, Yu.Yu. Zhuk, A.G. Optasyuk, S.V. Okhrimenko, O.B. Kardashov, K.D. Kozitskiy, S.V. The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Bacherikov, Yu.Yu. Zhuk, A.G. Optasyuk, S.V. Okhrimenko, O.B. Kardashov, K.D. Kozitskiy, S.V. |
| author_sort |
Bacherikov, Yu.Yu. |
| title |
The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis |
| title_short |
The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis |
| title_full |
The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis |
| title_fullStr |
The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis |
| title_full_unstemmed |
The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis |
| title_sort |
factors influencing luminescent properties of zns:mn obtained by the method of one-stage synthesis |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118319 |
| citation_txt |
The factors influencing luminescent properties
of ZnS:Mn obtained by the method of one-stage synthesis / Yu.Yu. Bacherikov, A.G. Zhuk, S.V. Optasyuk, O.B. Okhrimenko, K.D. Kardashov, S.V. Kozitskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 239-246. — Бібліогр.: 39 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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