Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter
Transmission of twenty-four carbon nanotube geometries to form twelve intramolecular junctions between every two carbon nanotubes have been investigated numerically. The twelve carbon nanotubes are zigzag and rest carbon nanotubes are armchair forming three different kinds of intramolecular junct...
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| Дата: | 2012 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118320 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter / Rashid Nizam, S. Mahdi A. Rizvi, Ameer Azam // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 268-275. — Бібліогр.: 43 назв. — англ. |
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irk-123456789-1183202017-05-30T03:05:31Z Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter Rashid Nizam S. Mahdi A. Rizvi Ameer Azam Transmission of twenty-four carbon nanotube geometries to form twelve intramolecular junctions between every two carbon nanotubes have been investigated numerically. The twelve carbon nanotubes are zigzag and rest carbon nanotubes are armchair forming three different kinds of intramolecular junctions named as circumferential defective carbon nanotubes, grouped defective carbon nanotubes and distributed defective carbon nanotubes. Electronic states joining carbon nanotubes form Schottky diode that is analyzed using the tight-binding method. These quantum transmissions through Schottky diodes have been compared among the different defective carbon nanotubes and correlated with the pentagon and heptagon that formed in the intramolecular junction. The transmission coefficient of conduction band always simulated less than the transmission coefficient of valence band in each intramolecular junction irrespective of the joining of carbon nanotubes in the Schottky diodes. The maximum asymmetry of distributed defective carbon nanotubes in transmission is observed more clearly than that for other two defective carbon nanotubes forming Schottky diodes. It is interesting to note that the position of the localized states above and below the Fermi energy level may be controlled with the distribution of the defect pairs and the hexagons around the defects in the defected carbon nanotube. 2012 Article Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter / Rashid Nizam, S. Mahdi A. Rizvi, Ameer Azam // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 268-275. — Бібліогр.: 43 назв. — англ. 1560-8034 PACS 61.48.De, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/118320 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Transmission of twenty-four carbon nanotube geometries to form twelve
intramolecular junctions between every two carbon nanotubes have been investigated
numerically. The twelve carbon nanotubes are zigzag and rest carbon nanotubes are
armchair forming three different kinds of intramolecular junctions named as
circumferential defective carbon nanotubes, grouped defective carbon nanotubes and
distributed defective carbon nanotubes. Electronic states joining carbon nanotubes form
Schottky diode that is analyzed using the tight-binding method. These quantum
transmissions through Schottky diodes have been compared among the different
defective carbon nanotubes and correlated with the pentagon and heptagon that formed in
the intramolecular junction. The transmission coefficient of conduction band always
simulated less than the transmission coefficient of valence band in each intramolecular
junction irrespective of the joining of carbon nanotubes in the Schottky diodes. The
maximum asymmetry of distributed defective carbon nanotubes in transmission is
observed more clearly than that for other two defective carbon nanotubes forming
Schottky diodes. It is interesting to note that the position of the localized states above and
below the Fermi energy level may be controlled with the distribution of the defect pairs
and the hexagons around the defects in the defected carbon nanotube. |
| format |
Article |
| author |
Rashid Nizam S. Mahdi A. Rizvi Ameer Azam |
| spellingShingle |
Rashid Nizam S. Mahdi A. Rizvi Ameer Azam Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Rashid Nizam S. Mahdi A. Rizvi Ameer Azam |
| author_sort |
Rashid Nizam |
| title |
Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter |
| title_short |
Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter |
| title_full |
Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter |
| title_fullStr |
Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter |
| title_full_unstemmed |
Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter |
| title_sort |
calculating the electronic transmission properties of semiconducting carbon nanotube schottky diodes with increase in diameter |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118320 |
| citation_txt |
Calculating the electronic transmission properties of semiconducting
carbon nanotube Schottky diodes with increase in diameter / Rashid Nizam, S. Mahdi A. Rizvi, Ameer Azam // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 268-275. — Бібліогр.: 43 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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| first_indexed |
2023-10-18T20:31:54Z |
| last_indexed |
2023-10-18T20:31:54Z |
| _version_ |
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