Reflection coefficient and optical conductivity of gallium nitride GaN

Reflection coefficient and optical conductivity of gallium nitride GaN

Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2–10 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the reflection coefficient has its...

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Дата:2012
Автори: Akinlami, J.O., Olateju, I.O.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118322
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Reflection coefficient and optical conductivity of gallium nitride GaN / J.O. Akinlami, I.O. Olateju // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 281-284. — Бібліогр.: 22 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118322
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spelling irk-123456789-1183222017-05-30T03:05:48Z Reflection coefficient and optical conductivity of gallium nitride GaN Akinlami, J.O. Olateju, I.O. Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2–10 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the reflection coefficient has its highest value 0.54 at the photon energy 7.0 eV. Variation of the real part of optical conductivity with photon energy shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the real part of optical conductivity has the maximum value 5.75·10¹⁵ for the photon energy 7.0 eV, and it decreases until coming to zero at 10.0 eV. The peaks indicate regions of deeper penetration of electromagnetic waves, and they also show high conductivity. The imaginary part of optical conductivity obtained for GaN in the photon energy range 2.0 to 10.0 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that it has a minimum value of –6.46·10¹⁵ for the photon energy 8.0 eV and a maximum value at –1.2·10¹⁵. This implies that there is a reduction in conductivity of GaN, and likewise, reduction in the propagation of electromagnetic waves in this region 2012 Article Reflection coefficient and optical conductivity of gallium nitride GaN / J.O. Akinlami, I.O. Olateju // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 281-284. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 78.20.Ci, 78.20.-e, 78.40.-q http://dspace.nbuv.gov.ua/handle/123456789/118322 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2–10 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the reflection coefficient has its highest value 0.54 at the photon energy 7.0 eV. Variation of the real part of optical conductivity with photon energy shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the real part of optical conductivity has the maximum value 5.75·10¹⁵ for the photon energy 7.0 eV, and it decreases until coming to zero at 10.0 eV. The peaks indicate regions of deeper penetration of electromagnetic waves, and they also show high conductivity. The imaginary part of optical conductivity obtained for GaN in the photon energy range 2.0 to 10.0 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that it has a minimum value of –6.46·10¹⁵ for the photon energy 8.0 eV and a maximum value at –1.2·10¹⁵. This implies that there is a reduction in conductivity of GaN, and likewise, reduction in the propagation of electromagnetic waves in this region
format Article
author Akinlami, J.O.
Olateju, I.O.
spellingShingle Akinlami, J.O.
Olateju, I.O.
Reflection coefficient and optical conductivity of gallium nitride GaN
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Akinlami, J.O.
Olateju, I.O.
author_sort Akinlami, J.O.
title Reflection coefficient and optical conductivity of gallium nitride GaN
title_short Reflection coefficient and optical conductivity of gallium nitride GaN
title_full Reflection coefficient and optical conductivity of gallium nitride GaN
title_fullStr Reflection coefficient and optical conductivity of gallium nitride GaN
title_full_unstemmed Reflection coefficient and optical conductivity of gallium nitride GaN
title_sort reflection coefficient and optical conductivity of gallium nitride gan
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2012
url http://dspace.nbuv.gov.ua/handle/123456789/118322
citation_txt Reflection coefficient and optical conductivity of gallium nitride GaN / J.O. Akinlami, I.O. Olateju // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 281-284. — Бібліогр.: 22 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT akinlamijo reflectioncoefficientandopticalconductivityofgalliumnitridegan
AT olatejuio reflectioncoefficientandopticalconductivityofgalliumnitridegan
first_indexed 2023-10-18T20:31:54Z
last_indexed 2023-10-18T20:31:54Z
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