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Complex index of refraction of indium nitride InN

Complex index of refraction of indium nitride InN

We have investigated the complex index of refraction of Indium Nitride (InN). We obtained refractive index which has the maximum value 2.59 at the photon energy 5.30 eV, the extinction coefficient which has the maximum value 0.86 at the photon energy 5.30 eV, the dielectric constant, the real par...

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Main Authors: Akinlami, J.O., Bolaji, F.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118324
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spelling irk-123456789-1183242017-05-30T03:06:02Z Complex index of refraction of indium nitride InN Akinlami, J.O. Bolaji, F.M. We have investigated the complex index of refraction of Indium Nitride (InN). We obtained refractive index which has the maximum value 2.59 at the photon energy 5.30 eV, the extinction coefficient which has the maximum value 0.86 at the photon energy 5.30 eV, the dielectric constant, the real part of the complex dielectric constant with the peak value 5.90 at the photon energy 5.30 eV and the imaginary part of the complex dielectric constant with the maximum value 4.48 at the photon energy 5.30 eV, the transmittance with the maximum value 0.1402 at the photon energy 5.3 0eV, the absorption coefficient which has its maximum value 86.0 at the photon energy 11.50 eV and reflection coefficient which with the maximum value 0.49 at the photon energy 5.3 eV. Thus, InN has the potential to operate optimally in a photonic device at the photon energy 5.30 eV. 2012 Article Complex index of refraction of indium nitride InN / J.O. Akinlami, F.M. Bolaji // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С 276-280. — Бібліогр.: 25 назв. — англ. 1560-8034 PACS 78.20.Ci, 78.20.-e, 78.40.-q http://dspace.nbuv.gov.ua/handle/123456789/118324 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We have investigated the complex index of refraction of Indium Nitride (InN). We obtained refractive index which has the maximum value 2.59 at the photon energy 5.30 eV, the extinction coefficient which has the maximum value 0.86 at the photon energy 5.30 eV, the dielectric constant, the real part of the complex dielectric constant with the peak value 5.90 at the photon energy 5.30 eV and the imaginary part of the complex dielectric constant with the maximum value 4.48 at the photon energy 5.30 eV, the transmittance with the maximum value 0.1402 at the photon energy 5.3 0eV, the absorption coefficient which has its maximum value 86.0 at the photon energy 11.50 eV and reflection coefficient which with the maximum value 0.49 at the photon energy 5.3 eV. Thus, InN has the potential to operate optimally in a photonic device at the photon energy 5.30 eV.
format Article
author Akinlami, J.O.
Bolaji, F.M.
spellingShingle Akinlami, J.O.
Bolaji, F.M.
Complex index of refraction of indium nitride InN
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Akinlami, J.O.
Bolaji, F.M.
author_sort Akinlami, J.O.
title Complex index of refraction of indium nitride InN
title_short Complex index of refraction of indium nitride InN
title_full Complex index of refraction of indium nitride InN
title_fullStr Complex index of refraction of indium nitride InN
title_full_unstemmed Complex index of refraction of indium nitride InN
title_sort complex index of refraction of indium nitride inn
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2012
url http://dspace.nbuv.gov.ua/handle/123456789/118324
citation_txt Complex index of refraction of indium nitride InN / J.O. Akinlami, F.M. Bolaji // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С 276-280. — Бібліогр.: 25 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT akinlamijo complexindexofrefractionofindiumnitrideinn
AT bolajifm complexindexofrefractionofindiumnitrideinn
first_indexed 2023-10-18T20:31:55Z
last_indexed 2023-10-18T20:31:55Z
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