Complex index of refraction of indium nitride InN
We have investigated the complex index of refraction of Indium Nitride (InN). We obtained refractive index which has the maximum value 2.59 at the photon energy 5.30 eV, the extinction coefficient which has the maximum value 0.86 at the photon energy 5.30 eV, the dielectric constant, the real par...
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| Дата: | 2012 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118324 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Complex index of refraction of indium nitride InN / J.O. Akinlami, F.M. Bolaji // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С 276-280. — Бібліогр.: 25 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1183242017-05-30T03:06:02Z Complex index of refraction of indium nitride InN Akinlami, J.O. Bolaji, F.M. We have investigated the complex index of refraction of Indium Nitride (InN). We obtained refractive index which has the maximum value 2.59 at the photon energy 5.30 eV, the extinction coefficient which has the maximum value 0.86 at the photon energy 5.30 eV, the dielectric constant, the real part of the complex dielectric constant with the peak value 5.90 at the photon energy 5.30 eV and the imaginary part of the complex dielectric constant with the maximum value 4.48 at the photon energy 5.30 eV, the transmittance with the maximum value 0.1402 at the photon energy 5.3 0eV, the absorption coefficient which has its maximum value 86.0 at the photon energy 11.50 eV and reflection coefficient which with the maximum value 0.49 at the photon energy 5.3 eV. Thus, InN has the potential to operate optimally in a photonic device at the photon energy 5.30 eV. 2012 Article Complex index of refraction of indium nitride InN / J.O. Akinlami, F.M. Bolaji // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С 276-280. — Бібліогр.: 25 назв. — англ. 1560-8034 PACS 78.20.Ci, 78.20.-e, 78.40.-q http://dspace.nbuv.gov.ua/handle/123456789/118324 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We have investigated the complex index of refraction of Indium Nitride (InN).
We obtained refractive index which has the maximum value 2.59 at the photon energy
5.30 eV, the extinction coefficient which has the maximum value 0.86 at the photon
energy 5.30 eV, the dielectric constant, the real part of the complex dielectric constant
with the peak value 5.90 at the photon energy 5.30 eV and the imaginary part of the
complex dielectric constant with the maximum value 4.48 at the photon energy 5.30 eV,
the transmittance with the maximum value 0.1402 at the photon energy 5.3 0eV, the
absorption coefficient which has its maximum value 86.0 at the photon energy 11.50 eV
and reflection coefficient which with the maximum value 0.49 at the photon energy
5.3 eV. Thus, InN has the potential to operate optimally in a photonic device at the
photon energy 5.30 eV. |
| format |
Article |
| author |
Akinlami, J.O. Bolaji, F.M. |
| spellingShingle |
Akinlami, J.O. Bolaji, F.M. Complex index of refraction of indium nitride InN Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Akinlami, J.O. Bolaji, F.M. |
| author_sort |
Akinlami, J.O. |
| title |
Complex index of refraction of indium nitride InN |
| title_short |
Complex index of refraction of indium nitride InN |
| title_full |
Complex index of refraction of indium nitride InN |
| title_fullStr |
Complex index of refraction of indium nitride InN |
| title_full_unstemmed |
Complex index of refraction of indium nitride InN |
| title_sort |
complex index of refraction of indium nitride inn |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118324 |
| citation_txt |
Complex index of refraction of indium nitride InN / J.O. Akinlami, F.M. Bolaji // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С 276-280. — Бібліогр.: 25 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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2023-10-18T20:31:55Z |
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2023-10-18T20:31:55Z |
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