Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method
The results of isothermal and nonisothermal crystallization investigations of the (As₂S₃)₁₀₀-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films crystallization is accompanied by a sharp decrease in transmission. The phase structure arising in the matrix of films during crystal...
Збережено в:
| Дата: | 2012 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118326 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method / V.M. Rubish, O.V. Kozusenok, P.P. Shtets, V.M. Marjan, E.V. Gera, A.A. Tarnaj // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 294-297. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The results of isothermal and nonisothermal crystallization investigations of
the (As₂S₃)₁₀₀-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films
crystallization is accompanied by a sharp decrease in transmission. The phase structure
arising in the matrix of films during crystallization corresponds to the structure of
crystalline SbSI. The formation mechanism of nanocrystalline SbSI inclusions in the
amorphous matrix is discussed. |
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