Photoconductivity in macroporous silicon with regular structure of macropores
The effects of the increase of photoconductivity in periodic macroporous silicon structures depending on the size and period of cylindrical macropores are investigated. It is obtained that the ratio of macroporous silicon photoconductivity to bulk silicon photoconductivity achieves a maximum at t...
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| Дата: | 2007 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118336 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoconductivity in macroporous silicon with regular structure of macropores / V.I. Ivanov, L.A. Karachevtseva, N.I. Karas, O.A. Lytvynenko, K.A. Parshin, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 72-76. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118336 |
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dspace |
| spelling |
irk-123456789-1183362017-05-30T03:06:09Z Photoconductivity in macroporous silicon with regular structure of macropores Ivanov, V.I. Karachevtseva, L.A. Karas, N.I. Lytvynenko, O.A. Parshin, K.A. Sachenko, S.A. The effects of the increase of photoconductivity in periodic macroporous silicon structures depending on the size and period of cylindrical macropores are investigated. It is obtained that the ratio of macroporous silicon photoconductivity to bulk silicon photoconductivity achieves a maximum at the distance between macropores equal to two thicknesses of the Schottky layer, which corresponds to the experimental data. The increase of photoconductivity is due to both the large total surface area of macropores and the existence of Schottky layers in the near-surface region of cylindrical macropores. 2007 Article Photoconductivity in macroporous silicon with regular structure of macropores / V.I. Ivanov, L.A. Karachevtseva, N.I. Karas, O.A. Lytvynenko, K.A. Parshin, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 72-76. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 71.25.Rk, 81.60.Cp http://dspace.nbuv.gov.ua/handle/123456789/118336 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The effects of the increase of photoconductivity in periodic macroporous
silicon structures depending on the size and period of cylindrical macropores are
investigated. It is obtained that the ratio of macroporous silicon photoconductivity to
bulk silicon photoconductivity achieves a maximum at the distance between macropores
equal to two thicknesses of the Schottky layer, which corresponds to the experimental
data. The increase of photoconductivity is due to both the large total surface area of
macropores and the existence of Schottky layers in the near-surface region of cylindrical
macropores. |
| format |
Article |
| author |
Ivanov, V.I. Karachevtseva, L.A. Karas, N.I. Lytvynenko, O.A. Parshin, K.A. Sachenko, S.A. |
| spellingShingle |
Ivanov, V.I. Karachevtseva, L.A. Karas, N.I. Lytvynenko, O.A. Parshin, K.A. Sachenko, S.A. Photoconductivity in macroporous silicon with regular structure of macropores Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Ivanov, V.I. Karachevtseva, L.A. Karas, N.I. Lytvynenko, O.A. Parshin, K.A. Sachenko, S.A. |
| author_sort |
Ivanov, V.I. |
| title |
Photoconductivity in macroporous silicon with regular structure of macropores |
| title_short |
Photoconductivity in macroporous silicon with regular structure of macropores |
| title_full |
Photoconductivity in macroporous silicon with regular structure of macropores |
| title_fullStr |
Photoconductivity in macroporous silicon with regular structure of macropores |
| title_full_unstemmed |
Photoconductivity in macroporous silicon with regular structure of macropores |
| title_sort |
photoconductivity in macroporous silicon with regular structure of macropores |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118336 |
| citation_txt |
Photoconductivity in macroporous silicon with regular structure of macropores / V.I. Ivanov, L.A. Karachevtseva, N.I. Karas, O.A. Lytvynenko, K.A. Parshin, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 72-76. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:31:56Z |
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2023-10-18T20:31:56Z |
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