Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors

In this paper we present experimental results of the studying degradation processes in electroluminescent panels, prepared from encapsulated ZnS:Cu powder phosphors and theoretical simulation of energy parameters for the phosphor. Energy band diagrams ZnS, Cu₂S, ZnS-Cu₂₋xS heterojunction and Cu-Z...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2007
Автор: Popovych, K.O.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118337
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors / K.O. Popovych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 77-80. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Резюме:In this paper we present experimental results of the studying degradation processes in electroluminescent panels, prepared from encapsulated ZnS:Cu powder phosphors and theoretical simulation of energy parameters for the phosphor. Energy band diagrams ZnS, Cu₂S, ZnS-Cu₂₋xS heterojunction and Cu-ZnS metal-semiconductor junction have been constructed and cohesive energies for Zn-S, Cu-S, Zn-O, Cu-O and Zn-Cu bonds have been calculated by the method based on a linear combination of atomic orbitals and pseudo-potential. Time dependences of brightness have been found to adequately fit a two-component exponential dependence. The first part of the exponential curve has been attributed to the diffusion processes taking place in Cu₂₋xS, and the second one to the diffusion of Cu in ZnS matrix.