Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on the continuity equation and incorporating the surface...
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Дата: | 2007 |
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Автори: | , , , , , |
Формат: | Стаття |
Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118343 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure / E.V. Grushko, O.L. Maslyanchuk, X. Mathew, V.V. Motushchuk, L.A. Kosyachenko, E.A. Streltsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 15-20. — Бібліогр.: 10 назв. — англ. |
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irk-123456789-1183432017-05-30T03:04:16Z Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure Grushko, E.V. Maslyanchuk, O.L. Mathew, X. Motushchuk, V.V. Kosyachenko, L.A. Streltsov, E.A. A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on the continuity equation and incorporating the surface recombination losses does not explain the measured spectra in the entire range of wavelengths, particularly the abovementioned decay in the short-wavelength region. The satisfactory description of the measured spectra is achieved by proposing a model, in which the surface recombination along with the Schottky effect resulted in the presence of a dead layer in the space-charge region is taken into account. By varying the parameters such as uncompensated carrier concentration and carrier lifetime, the above model can explain the actual photoresponse spectra. 2007 Article Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure / E.V. Grushko, O.L. Maslyanchuk, X. Mathew, V.V. Motushchuk, L.A. Kosyachenko, E.A. Streltsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 15-20. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 84.60.Jt http://dspace.nbuv.gov.ua/handle/123456789/118343 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of
a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The
theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on
the continuity equation and incorporating the surface recombination losses does not
explain the measured spectra in the entire range of wavelengths, particularly the abovementioned
decay in the short-wavelength region. The satisfactory description of the
measured spectra is achieved by proposing a model, in which the surface recombination
along with the Schottky effect resulted in the presence of a dead layer in the space-charge
region is taken into account. By varying the parameters such as uncompensated carrier
concentration and carrier lifetime, the above model can explain the actual photoresponse
spectra. |
format |
Article |
author |
Grushko, E.V. Maslyanchuk, O.L. Mathew, X. Motushchuk, V.V. Kosyachenko, L.A. Streltsov, E.A. |
spellingShingle |
Grushko, E.V. Maslyanchuk, O.L. Mathew, X. Motushchuk, V.V. Kosyachenko, L.A. Streltsov, E.A. Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Grushko, E.V. Maslyanchuk, O.L. Mathew, X. Motushchuk, V.V. Kosyachenko, L.A. Streltsov, E.A. |
author_sort |
Grushko, E.V. |
title |
Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure |
title_short |
Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure |
title_full |
Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure |
title_fullStr |
Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure |
title_full_unstemmed |
Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure |
title_sort |
spectral distribution of photoelectric quantum yield of thin-film au-cdte diode structure |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2007 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/118343 |
citation_txt |
Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure / E.V. Grushko, O.L. Maslyanchuk, X. Mathew, V.V. Motushchuk, L.A. Kosyachenko, E.A. Streltsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 15-20. — Бібліогр.: 10 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT grushkoev spectraldistributionofphotoelectricquantumyieldofthinfilmaucdtediodestructure AT maslyanchukol spectraldistributionofphotoelectricquantumyieldofthinfilmaucdtediodestructure AT mathewx spectraldistributionofphotoelectricquantumyieldofthinfilmaucdtediodestructure AT motushchukvv spectraldistributionofphotoelectricquantumyieldofthinfilmaucdtediodestructure AT kosyachenkola spectraldistributionofphotoelectricquantumyieldofthinfilmaucdtediodestructure AT streltsovea spectraldistributionofphotoelectricquantumyieldofthinfilmaucdtediodestructure |
first_indexed |
2023-10-18T20:31:57Z |
last_indexed |
2023-10-18T20:31:57Z |
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