Dislocation emission caused by different types of nanoscale deformation defects in CdTe
Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by chemical etching and low temperature photoluminescence in a mapping regi...
Збережено в:
| Дата: | 2014 |
|---|---|
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118357 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Dislocation emission caused by different types of nanoscale deformation defects in CdTe / V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 29-33. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118357 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1183572017-05-31T03:04:45Z Dislocation emission caused by different types of nanoscale deformation defects in CdTe Babentsov, V.N. Boyko, V.A. Gasan-zade, S.G. Shepelski, G.A. Stariy, S.V. Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by chemical etching and low temperature photoluminescence in a mapping regime. The crystallographic orientation of the dislocation rosettes of macroscopic plastic deformation lines was analyzed on the (100), (110), and (111) surfaces. 2014 Article Dislocation emission caused by different types of nanoscale deformation defects in CdTe / V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 29-33. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 61.72.Ji, 61.72.Lk, 78.55.Et http://dspace.nbuv.gov.ua/handle/123456789/118357 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Dislocation-related defects induced by dislocation motion in p-CdTe were
studied. Generation of “fresh” dislocations from the indented point of the CdTe (100),
(110), and (111) surfaces at room temperatures was visualized by chemical etching and
low temperature photoluminescence in a mapping regime. The crystallographic
orientation of the dislocation rosettes of macroscopic plastic deformation lines was
analyzed on the (100), (110), and (111) surfaces. |
| format |
Article |
| author |
Babentsov, V.N. Boyko, V.A. Gasan-zade, S.G. Shepelski, G.A. Stariy, S.V. |
| spellingShingle |
Babentsov, V.N. Boyko, V.A. Gasan-zade, S.G. Shepelski, G.A. Stariy, S.V. Dislocation emission caused by different types of nanoscale deformation defects in CdTe Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Babentsov, V.N. Boyko, V.A. Gasan-zade, S.G. Shepelski, G.A. Stariy, S.V. |
| author_sort |
Babentsov, V.N. |
| title |
Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| title_short |
Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| title_full |
Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| title_fullStr |
Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| title_full_unstemmed |
Dislocation emission caused by different types of nanoscale deformation defects in CdTe |
| title_sort |
dislocation emission caused by different types of nanoscale deformation defects in cdte |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118357 |
| citation_txt |
Dislocation emission caused by different types
of nanoscale deformation defects in CdTe / V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 29-33. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT babentsovvn dislocationemissioncausedbydifferenttypesofnanoscaledeformationdefectsincdte AT boykova dislocationemissioncausedbydifferenttypesofnanoscaledeformationdefectsincdte AT gasanzadesg dislocationemissioncausedbydifferenttypesofnanoscaledeformationdefectsincdte AT shepelskiga dislocationemissioncausedbydifferenttypesofnanoscaledeformationdefectsincdte AT stariysv dislocationemissioncausedbydifferenttypesofnanoscaledeformationdefectsincdte |
| first_indexed |
2023-10-18T20:31:47Z |
| last_indexed |
2023-10-18T20:31:47Z |
| _version_ |
1796150443589500928 |