Features of Auger-emission in channeling
Shown in this paper is the influence of channeling effect on formation of the signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It has been ascertained the anisotropic (wave-like) character of the yield value for lowenergy Auger-electrons in silicon, when changi...
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| Дата: | 2014 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118361 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Features of Auger-emission in channeling / I.A. Kossko, A.Ye. Denisov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 97-99. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118361 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1183612017-05-31T03:04:44Z Features of Auger-emission in channeling Kossko, I.A. Denisov, A.Ye. Shown in this paper is the influence of channeling effect on formation of the signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It has been ascertained the anisotropic (wave-like) character of the yield value for lowenergy Auger-electrons in silicon, when changing the angle of acting initial radiation during sample rotation. 2014 Article Features of Auger-emission in channeling / I.A. Kossko, A.Ye. Denisov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 97-99. — Бібліогр.: 6 назв. — англ. 1560-8034 Features of Auger-emission in channeling http://dspace.nbuv.gov.ua/handle/123456789/118361 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Shown in this paper is the influence of channeling effect on formation of the
signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It
has been ascertained the anisotropic (wave-like) character of the yield value for lowenergy
Auger-electrons in silicon, when changing the angle of acting initial radiation
during sample rotation. |
| format |
Article |
| author |
Kossko, I.A. Denisov, A.Ye. |
| spellingShingle |
Kossko, I.A. Denisov, A.Ye. Features of Auger-emission in channeling Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kossko, I.A. Denisov, A.Ye. |
| author_sort |
Kossko, I.A. |
| title |
Features of Auger-emission in channeling |
| title_short |
Features of Auger-emission in channeling |
| title_full |
Features of Auger-emission in channeling |
| title_fullStr |
Features of Auger-emission in channeling |
| title_full_unstemmed |
Features of Auger-emission in channeling |
| title_sort |
features of auger-emission in channeling |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118361 |
| citation_txt |
Features of Auger-emission in channeling / I.A. Kossko, A.Ye. Denisov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 97-99. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT kosskoia featuresofaugeremissioninchanneling AT denisovaye featuresofaugeremissioninchanneling |
| first_indexed |
2023-10-18T20:31:48Z |
| last_indexed |
2023-10-18T20:31:48Z |
| _version_ |
1796150444014174208 |